AS7C251MNTF32A Datasheet, PDF (1/18 Pages) Alliance Semiconductor Corporation – 2.5V 1M x 32/36 Flowthrough SRAM with NTD

December 2004
AS7C251MNTF32A
AS7C251MNTF36A
®
2.5V 1M × 32/36 Flowthrough SRAM with NTD^TM
Features
• Organization: 1,048,576 words × 32 or 36 bits
• NTD^™architecture for efficient bus operation
• Fast clock to data access: 7.5/8.5/10 ns
• Fast OE access time: 3.5/4.0 ns
• Fully synchronous operation
• Flow-through mode
• Asynchronous output enable control
• Available in 100-pin TQFP package
• Byte write enables
• Clock enable for operation hold
• Multiple chip enables for easy expansion
• 2.5V core power supply
• Self-timed write cycles
• Interleaved or linear burst modes
• Snooze mode for standby operation
Logic block diagram
20
A[19:0]
CE0
CE1
CE2
R/W
BWa
BWb
BWc
BWd
ADV / LD
LBO
ZZ
D
Q
Address
register
Burst logic
CLK
Control
logic
CLK
DQ[a,b,c,d] ^32/36
D ^Data
Input
Q
Register
CLK
20
D
Q
Write delay
addr. registers
20
CLK
CLK
32/36
1M x 32/36
SRAM
Array
32/36 32/36
CLK
CEN
Selection guide
Minimum cycle time
Maximum clock access time
Maximum operating current
Maximum standby current
Maximum CMOS standby current (DC)
OE
-75
8.5
7.5
325
140
90
32/36
Output
Buffer
OE
32/36
DQ[a,b,c,d]
-85
-10
10
12
8.5
10
300
275
130
130
90
90
Units
ns
ns
mA
mA
mA
12/23/04, v 1.1
Alliance Semiconductor
P. 1 of 18
Copyright © Alliance Semiconductor. All rights reserved.