AS7C164-12 Datasheet, PDF (1/8 Pages) Alliance Semiconductor Corporation – 5V 8K X 8 CMOS SRAM

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• AS7C164 (5V version)
• Commercial temperature
• Organization: 8,192 words × 8 bits
• Center power and ground pins
• High speed
- 12/15/20 ns address access time
- 6/7/8 ns output enable access time
• Low power consumption: ACTIVE
- 550 mW (AS7C164) / max @ 12 ns
• Low power consumption: STANDBY
- 11 mW (AS7C164) / max CMOS I/O
• 2.0V data retention
• Easy memory expansion with CE1, CE2, OE inputs
• TTL-compatible, three-state I/O
• 28-pin JEDEC standard package
- 300 mil SOJ
• ESD protection ≥ 2000 volts
• Latch-up current ≥ 200 mA
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V_CC
GND
A1
A2
A3
A4
A10
A11
A12
Input buffer
128×64×8
Array
(65,536)
Column decoder
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056789
Control
circuit
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28-pin PDIP, SOJ (300 mL)
I/O7
I/O0
WE
OE
CE1
CE2
NC
1
A12
2
A7
3
A6
4
A5
5
A4
6
A3
7
A2
8
A1
9
A0
10
I/O0
11
I/O1
12
I/O2
13
GND
14
28
Vcc
27
WE
26
CE2
25
A8
24
A9
23
A11
22
OE
21
A10
20
CE1
19
I/O7
18
I/O6
17
I/O5
16
I/O4
15
I/O3
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-12
-15
Maximum address access time
12
15
Maximum output enable access time
6
7
Maximum operating current
110
100
Maximum CMOS standby current
2.0
2.0
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-20
Unit
20
ns
8
ns
90
mA
2.0
mA
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