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| AS6WA5128 Datasheet, PDF (1/9 Pages) Alliance Semiconductor Corporation – 3.0V to 3.6V 512K × 8 Intelliwatt low-power CMOS SRAM | |||
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October 2000
AS6WA5128
®
3.0V to 3.6V 512K à 8 Intelliwatt⢠low-power CMOS SRAM
Features
⢠AS6WA5128
⢠Intelliwatt⢠active power circuitry
⢠Industrial and commercial temperature ranges available
⢠Organization: 524,288 words à 8 bits
⢠3.0V to 3.6V at 55 ns
⢠Low power consumption: ACTIVE
- 144 mW at 3.6V and 55 ns
⢠Low power consumption: STANDBY
- 72 µW max at 3.6V
⢠1.2V data retention
⢠Equal access and cycle times
⢠Easy memory expansion with CS, OE inputs
⢠Smallest footprint packages
- 36(48)-ball FBGA
- 32-pin TSOP I and TSOP II packages are available on
Alliance AS6UB5128 product family (available January
2001)
⢠ESD protection ⥠2000 volts
⢠Latch-up current ⥠200 mA
Logic block diagram
VCC
GND
Input buffer
A0
A1
A2
A3
512K Ã 8
A4
Array
A5
A6
(4,194,304)
A7
A8
Column decoder
Control
circuit
I/O8
I/O1
WE
OE
CS
36(48)-CSP BGA Package (shading indicates no ball)
1
2
3
4
5
6
A
A0
A1
NC
A3
A6
A8
B
I/O5
A2
WE
A4
A7
I/O1
C
I/O6
NC
A5
I/O2
D
VSS
VCC
E
VCC
VSS
F
I/O7
A18
A17
I/O3
G
I/O8 OE
CS
A16
A15 I/O4
H
A9
A10
A11
A12
A13
A14
Selection guide
Product
VCC Range
Min
Typ2
Max
(V)
(V)
(V)
AS6WA5128
3.0
3.3
3.6
Speed
(ns)
55
Power Dissipation
Operating (ICC)
Max (mA)
Standby (ISB1)
Max (µA)
2
20
10/6/00
ALLIANCE SEMICONDUCTOR
1
Copyright ©2000 Alliance Semiconductor. All rights reserved.
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