AS6C8016A Datasheet, PDF (1/12 Pages) Alliance Semiconductor Corporation – Process Technology

AUGUST 2010
AS6C8016A
FEATURES
512K X 16 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
• Process Technology : 0.15μm Full CMOS
• Organization : 512K x 16 bit
• Power Supply Voltage : 2.7V ~ 3.6V
• Low Data Retention Voltage : 1.5V(Min.)
• Three state output and TTL Compatible
• Package Type : 48-FPBGA, 44-TSOP2
The AS6C8016A is fabricated by Alliance ' s
advanced full CMOS process technology. The families
support industrial temperature range and Chip Scale
Package for user flexibility of system design. The families
also support low data retention voltage for battery back-
up operation with low data retention current.
PRODUCT FAMILY
Product
Family
Operating
Temperature
Vcc
Range
Speed
AS6C8016A
AS6C8016A-55BIN
AS6C8016A-55ZIN
Industrial
(-40 ~ 85^oC) ^{2.7 ~ 3.6 V}
55 ns
Power Dissipation
Standby Operating
(I_SB1, Typ.) (I_CC1.Max.)
2 μA¹⁾
4 mA
PKG
Type
KGD
48-FPBGA
44-TSOP2
1. Typical values are measured at Vcc=3.3V, T_A=25^oC and not 100% tested.
FUNCTIONAL BLOCK DIAGRAM
Pre-charge Circuit
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
DQ0 ~ DQ7
DQ8 ~ DQ15
V_CC
V_SS
Memory Array
2048 x 4096
Data
Cont
I/O Circuit
Data
Cont
Column Select
A11 A12 A13 A14 A15 A16 A17 A18
WE
OE
UB
Control Logic
LB
CS
1