AS6C8016 Datasheet, PDF (1/12 Pages) Alliance Semiconductor Corporation – Fully static operation

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AS6C8016
512K X 16 BIT SUPER ⁵L¹O²W^KP^XO⁸W^BER^ITC^LM^OO^WS S^PR^OA^WM^{ER CMOS SRAM}
FEATURES
Fast access time : 55ns
Low power consumption:
Operating current : 30mA (TYP.)
Standby current : 6µA (TYP.) LL-version
Single 2.7V ~ 5.5V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 1.5V (MIN.)
Lead free and green package available
Package : 44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Family
AS6C8016(I)
Operating
Temperature
-40 ~ 85℃
Vcc Range
2.7 ~ 5.5V
GENERAL DESCRIPTION
The AS6C8016 is a 8,388,608-bit low power
CMOS static random access memory organized as
524,288 words by 16 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The AS6C8016 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The AS6C8016 operates from a single power
supply of 2.7V ~ 5.5V and all inputs and outputs are
fully TTL compatible
Speed
55ns
Power Dissipation
Standby(ISB1,TYP.) Operating(Icc,TYP.)
6µA(LL)
30mA
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0-A18
DECODER
512Kx16
MEMORY ARRAY
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
I/O DATA
CIRCUIT
CE#
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
COLUMN I/O
PIN DESCRIPTION
SYMBOL
DESCRIPTION
A0 - A18
Address Inputs
DQ0 – DQ15 Data Inputs/Outputs
CE#
Chip Enable Input
WE#
Write Enable Input
OE#
Output Enable Input
LB#
Lower Byte Control
UB#
Upper Byte Control
VCC
Power Supply
VSS
Ground
NOVEMBER/2007, V 1.0
Alliance Memory Inc.
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