AS6C62256A Datasheet, PDF (1/10 Pages) Alliance Semiconductor Corporation – Common data inputs and data outputs

APRIL 2009
AS6C62256A
32K X 8 BIT LOW POWER CMOS SRAM
FEATURES
 32768x8 bit static CMOS RAM
 Access times 70 ns
 Common data inputs and data
outputs
 Three-state outputs
 Typ. operating supply current
o 70 ns: 50 mA
 TTL/CMOS-compatible
 Automatical reduction of power
dissipation in long Read Cycles
 Power supply voltage 5V + 10%
 Operating temperature ranges
o 0 to 70 °C
o -40 to 85 °C
 QS 9000 Quality Standard
 ESD protection > 2000 V
(MIL STD 883C M3015.7)
 Latch-up immunity >100 mA
 Packages: PDIP28 (600 mil)
SOP28 (330 mil)
DESCRIPTION
The AS6C62256A is a static RAM
manufactured using a CMOS
process technology with the
following operating modes:
- Read
- Standby
- Write
- Data Retention
The memory array is based on a 6-
transistor cell.
The circuit is activated by the falling
edge of E. The address and control
inputs open simultaneously.
According to the information of W
and G, the data inputs, or outputs,
are active. In a Read cycle, the data
outputs are activated by the falling
edge of G, afterwards the data word
read will be available at the outputs
DQ0-DQ7. After the address
change, the data outputs go High-Z
until the new information read is
available. The data outputs have not
preferred state.
The Read cycle is finished by the
falling edge of W, or by the rising
edge of E, respectively.
Data retention is guaranteed down
to 2 V. With the exception of E, all
inputs consist of NOR gates, so that
no pull-up/pull-down resistors are
required.
PIN CONFIGURATION
PIN DESCRIPTION
APRIL/2009
ALLIANCE MEMORY
PAGE 1 of 10