AS6C2016 Datasheet, PDF (1/13 Pages) Alliance Semiconductor Corporation – Fully static operation

JFaEnBuRaUrAy R2Y0027008
AS6C2016
128K X 16 BIT LO⁵W¹P²O^KW^XER⁸C^BM^IO^TS^LS^ORA^WM^{POWER CMOS SRAM}
FEATURES
Fast access time : 55ns
Low power consumption:
Operating current : 20/18mA (TYP.)
Standby current : 2µA (TYP.)
Single 2.7V ~ 5.5V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 2.0V (MIN.)
Lead free and green package available
Package : 44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Family
AS6C2016 (I)
Operating
Temperature
-40 ~ 85℃
Vcc Range
2.7 ~ 5.5V
GENERAL DESCRIPTION
The AS6C2016 is a 2,097,152-bit low power
CMOS static random access memory organized as
131,072 words by 16 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The AS6C2016 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The AS6C2016 operates from a single power
supply of 2.7V ~ 5.5V and all inputs and outputs are
fully TTL compatible
Speed
55ns
Power Dissipation
Standby(ISB1,TYP.) Operating(Icc,TYP.)
2µA
20/18mA
FEBRUARY/2008, V 1.c
Alliance Memory Inc.
Page 1 of 13