AS6C1616A Datasheet, PDF (1/12 Pages) Alliance Semiconductor Corporation – Low Data Retention Voltage

AUGUST 2010
1024K X 16 BIT LOW POWER CMOS SRAM
AS6C1616A
FEATURES
• Process Technology : 0.15μm Full CMOS
• Organization : 1M x 16 bit
• Power Supply Voltage : 2.7V ~ 3.6V
• Low Data Retention Voltage : 1.5V(Min.)
• Three state output and TTL Compatible
• Package Type : 48-FPBGA
GENERAL DESCRIPTION
TheAS6C1616A - 55%,1 is fabricated by Alliance's
advanced full CMOS process technology. The device
supports industrial temperature range and Chip Scale
Package for user flexibility of system design. The device
also supports low data retention voltage for battery back-
up operation with low data retention current.
PRODUCT FAMILY
Product
Family
Operating
Temperature
Vcc
Range
Speed
AS6C1616A - 55 BIN
Industrial
(-40 ~ 85^oC) ^{2.7 ~ 3.6 V}
55ns
Power Dissipation
Standby Operating
(I_SB1, Typ.) (I_CC1.Max.)
PKG
Type
4 μA¹⁾
8 mA
48-FPBGA
1. Typical values are measured at Vcc=3.3V, T_A=25^oC and not 100% tested.
FUNCTIONAL BLOCK DIAGRAM
Pre-charge Circuit
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
DQ0 ~ DQ7
DQ8 ~ DQ15
V_CC
V_SS
Memory Array
1M x 16
Data
Cont
I/O Circuit
Data
Cont
Column Select
WE
OE
UB
Control Logic
LB
CS1
CS2
A11 A12 A13 A14 A15 A16 A17 A18 A19
1