AS6C1616-TFBGA Datasheet, PDF (1/11 Pages) Alliance Semiconductor Corporation – Fully static operation

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AS6C1616
1024K X 16 BIT LO⁵W¹²P^KOW^X E⁸R ^BC^IM^TO^LS^OS^WRAM^{POWER CMOS SRAM}
FEATURES
Fast access time : 55/70ns
Low power consumption:
Operating current : 45/30mA (TYP.)
Standby current : 4μA (TYP.) SL-version
Single 2.7V ~ 3.6V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 1.2V (MIN.)
Lead free and green package available
Package : 48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Family
AS6C1616(I)
Operating
Temperature
-40 ~ 85 ^oC
Vcc Range
2.7 ~ 3.6V
GENERAL DESCRIPTION
The AS6C1616 is a 16,777,216-bit low power
CMOS static random access memory organized as
1,048,576 words by 16 bits. It is fabricated using
very high performance, high reliability CMOS
technology. Its standby current is stable within the
range of operating temperature.
The AS6C1616 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The AS6C16 16 operates from a singlepower
supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
Speed
55/70ns
Power Dissipation
Standby(ISB1,TYP.) Operating (Icc,TYP.)
4µA
45/30mA
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0-A19
DECODER
1024Kx16
MEMORY ARRAY
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
I/O DATA
CIRCUIT
CE#
CE2
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
COLUMN I/O
PIN DESCRIPTION
SYMBOL
A0 - A19
DQ0 – DQ15
CE#, CE2
WE#
OE#
LB#
UB#
VCC
VSS
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
FEBRUARY/2009, V 1.a
Alliance Memory Inc.
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