AS4C8M16D1 Datasheet, PDF (1/64 Pages) Alliance Semiconductor Corporation – Fully synchronous operation

AS4C8M16D1
Confidential
8M x 16 DDR Synchronous DRAM (SDRAM)
Released (Rev. 1.1, Feb. /2009)
Features
 ^{Fast clock rate: 200MHz}
 ^{Differential Clock CK &} CK ^input
 ^{Bi-directional DQS}
 ^{DLL enable/disable by EMRS}
 ^{Fully synchronous operation}
 ^{Internal pipeline architecture}
 ^{Four internal banks, 2M x 16-bit for each bank}
 ^{Programmable Mode and Extended Mode registers}
- CAS Latency: 2, 2.5, 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
 ^{Individual byte write mask control}
 ^{DM Write Latency = 0}
 ^{Auto Refresh and Self Refresh}
 ^{4096 refresh cycles / 64ms}
 ^{Operating temperature range}
- Commercial (0 ~ 70°C)
- Industrial (-40 ~ 85°C)
 ^{Precharge & active power down}
 ^{Power supplies: V}DD & ^VDDQ ^{= 2.5V  5%}
 ^{Interface: SSTL_2 I/O Interface}
 ^{Package: 66 Pin TSOP II, 0.65mm pin pitch}
- Pb free and Halogen free
Overview
The 128Mb DDR AS4C8M16D1 SDRAM is a high-speed
CMOS double data rate synchronous DRAM containing
128 Mbits. It is internally configured as a quad 2M x 16
DRAM with a synchronous interface (all signals are
registered on the positive edge of the clock signal, CK).
Data outputs occur at both rising edges of CK
and _CK .Read and write accesses to the SDRAM are burst
oriented; accesses start at a selected location and
continue for a programmed number of locations in a
programmed sequence. Accesses begin with the
registration of a BankActivate command which is then
followed by a Read or Write command. The DDR SDRAM
provides programmable Read or Write burst lengths of 2,
4, or 8. An auto precharge function may be enabled to
provide a self-timed row precharge that is initiated at the
end of the burst sequence. The refresh functions, either
Auto or Self Refresh are easy to use. In addition, The
DDR SDRAM features programmable DLL option. By
having a programmable mode register and extended
mode register, the system can choose the most suitable
modes to maximize its performance. These devices are
well suited for applications requiring high memory
bandwidth and high performance.
Table 1.Ordering Information
Part Number
Clock Data Rate Package Temperature Temp Range
AS4C8M16D1-5TCN 200MHz 400Mbps/pin 66pin TSOPII Commercial 0 ~ 70°C
AS4C8M16D1-5TIN 200MHz 400Mbps/pin 66pin TSOPII Industrial -40 ~ 85°C
T: indicates TSOP II package
C: indicates Commercial temp.
I: indicates Industrial temp.
N: indicates lead free ROHS
Alliance Memory, Inc.
551 Taylor Way, San Carlos, CA 94070
TEL: [phone] FAX: [phone]
Alliance Memory, Inc. reserves the right to change products or specification without notice.