AS4C4M16D1 Datasheet, PDF (1/52 Pages) Alliance Semiconductor Corporation – Fully synchronous operation

AS4C4M16D1
4M x 16 DDR Synchronous DRAM (SDRAM)
Alliance Memory Confidential
Advanced (Rev. 1.0, May /2011)
Features
 ^{Fast clock rate: 200MHz}
 ^{Differential Clock CK &} CK
 ^{Bi-directional DQS}
 ^{DLL enable/disable by EMRS}
 ^{Fully synchronous operation}
 ^{Internal pipeline architecture}
 ^{Four internal banks, 1M x 16-bit for each bank}
 ^{Programmable Mode and Extended Mode Registers}
- CAS Latency: 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
 ^{Individual byte writes mask control}
 ^{DM Write Latency = 0}
 ^{Auto Refresh and Self Refresh}
 ^{4096 refresh cycles / 64ms}
 ^{Operating temperature range}
- Commercial (0 ~ 70°C)
- Industrial (-40 ~ 85°C)
 ^{Precharge & active power down}
 ^{Power supplies: V}DD ^{& V}DDQ ^{= 2.5V  0.2V}
 ^{Interface: SSTL_2 I/O Interface}
 ^{Package: 66 Pin TSOP II, 0.65mm pin pitch}
- Pb free and Halogen free
Overview
The AS4C4M16D1 DDR SDRAM is a high-
speed CMOS double data rate synchronous DRAM
containing 64 Mbits. It is internally configured as a
quad 1M x 16 DRAM with a synchronous interface
(all signals are registered on the positive edge of the
clock signal, CK). Data outputs occur at both rising
edges of CK and _CK . Read and write accesses to
the SDRAM are burst oriented; accesses start at a
selected location and continue for a programmed
number of locations in a programmed sequence.
Accesses begin with the registration of a
BankActivate command which is then followed by a
Read or Write command.
The AS4C4M16D1 provides programmable Read or
Write burst lengths of 2, 4, 8. An auto precharge
function may be enabled to provide a self-timed row
precharge that is initiated at the end of the burst
sequence. The refresh functions, either Auto or Self
Refresh are easy to use. In addition, AS4C4M16D1
features programmable DLL option. By having a
programmable mode register and extended mode
register, the system can choose the most suitable
modes to maximize its performance. These devices
are well suited for applications requiring high
memory bandwidth and high performance.
Table 1.Ordering Information
Part Number
Clock Data Rate Package Temperature Temp Range
AS4C4M16D1-5TCN 200MHz 400Mbps/pin 66pin TSOPII Commercial 0 ~ 70°C
AS4C4M16D1-5TIN 200MHz 400Mbps/pin 66pin TSOPII Industrial -40 ~ 85°C
T: indicates TSOP II package
C: indicates Commercial temp.
I: indicates Industrial temp.
N: indicates lead free ROHS
Alliance Memory, Inc.
551 Taylor Way, San Carlos, CA 94070
TEL: [phone] FAX: [phone]
Alliance Memory, Inc. reserves the right to change products or specification without notice.