AS4C16M16D1 Datasheet, PDF (1/67 Pages) Alliance Semiconductor Corporation – Fully synchronous operation

AS4C16M16D1
16M x 16 bit DDR Synchronous DRAM (SDRAM)
Alliance Memory Confidential
Advanced (Rev. 1.1, Sep. /2011)
Features
 ^{Fast clock rate: 200MHz}
 ^{Differential Clock CK &} CK
 ^{Bi-directional DQS}
 ^{DLL enable/disable by EMRS}
 ^{Fully synchronous operation}
 ^{Internal pipeline architecture}
 ^{Four internal banks, 4M x 16-bit for each bank}
 ^{Programmable Mode and Extended Mode registers}
- CAS Latency: 2, 2.5, 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
 ^{Individual byte-write mask control}
 ^{DM Write Latency = 0}
 ^{Auto Refresh and Self Refresh}
 ^{8192 refresh cycles / 64ms}
 ^{Operating temperature range}
- Commercial (0 ~ 70°C)
- Industrial (-40 ~ 85°C)
 ^{Precharge & active power down}
 ^{Power supplies: V}DD & ^VDDQ ^{= 2.5V  0.2V}
 ^{Interface: SSTL_2 I/O Interface}
 ^{Package: 66 Pin TSOP II, 0.65mm pin pitch}
- Pb free and Halogen free
 ^{Package: 60-Ball, 8x13x1.2 mm (max) TFBGA}
- Pb free and Halogen Free
Overview
The AS4C16M16D1 SDRAM is a high-speed CMOS
double data rate synchronous DRAM containing 256 Mbits.
It is internally configured as a quad 4M x 16 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal, CK). Data outputs occur
at both rising edges of CK and ^CK .d Read and write
accesses to the SDRAM are burst oriented; accesses start
at a selected location and continue for a programmed
number of locations in a programmed sequence. Accesses
begin with the registration of a BankActivate command
which is then followed by a Read or Write command. The
AS4C16M16D1 provides programmable Read or Write
burst lengths of 2, 4, or 8. An auto precharge function may
be enabled to provide a self-timed row precharge that is
initiated at the end of the burst sequence. The refresh
functions, either Auto or Self Refresh are easy to use. In
addition, AS4C16M16D1 features programmable DLL
option. By having a programmable mode register and
extended mode register, the system can choose the most
suitable modes to maximize its performance. These
devices are well suited for applications requiring high
memory band-width, result in a device particularly well
suited to high performance main memory and graphics
applications.
Table 1.Ordering Information
Part Number
Clock Data Rate Package Temperature Temp Range
AS4C16M16D1-5TCN 200MHz 400Mbps/pin 66pin TSOPII Commercial 0 ~ 70°C
AS4C16M16D1-5TIN 200MHz 400Mbps/pin 66pin TSOPII Industrial -40 ~ 85°C
AS4C16M16D1-5BCN 200MHz 400Mbps/pin 60ball TFBGA Commercial 0 ~ 70°C
AS4C16M16D1-5BIN 200MHz 400Mbps/pin 60ball TFBGA Industrial -40 ~ 85°C
T: indicates TSOP II package
B: indicates TFBGA package
C: indicates Commercial temp.
I: indicates Industrial temp.
N: indicates lead free ROHS
Alliance Memory, Inc.
551 Taylor Way, San Carlos, CA 94070
TEL: [phone] FAX: [phone]
Alliance Memory, Inc. reserves the right to change products or specification without notice.