AS29F040 Datasheet, PDF (1/18 Pages) Alliance Semiconductor Corporation – 5V 512K x 8 CMOS FLASH EEPROM

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• Organization:512K words × 8 bits
• Industrial and commercial temperature
• Sector architecture
- Eight 64K byte sectors
- Erase any combination of sectors or full chip
• Single 5.0±0.5V power supply for read/write operations
• Sector protection
• High speed 55/70/90/120/150 ns address access time
• Automated on-chip programming algorithm
- Automatically programs/verifies data at specified
address
• Automated on-chip erase algorithm
- Automatically preprograms/erases chip or specified
sectors
• 10,000 write/erase cycle endurance
• Low power consumption
- 30 mA maximum read current
- 60 mA maximum program current
- 400 µA typical standby current
• JEDEC standard software, packages and pinouts
- 32-pin TSOP
- 32-pin PLCC
• Detection of program/erase cycle completion
- DQ7 DATA polling
- DQ6 toggle bit
• Erase suspend/resume
- Supports reading data from or programming data to
a sector not being erased
• Low V_CC write lock-out below 2.8V
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V_CC
V_SS
Program/erase
WE
control
Command
register
CE
OE
Sector protect
switches
Erase voltage
generator
Program voltage
generator
Chip enable
Output enable
Logic
DQ0–DQ7
Input/output
buffers
STB _{Data latch}
STB
V_CC detector
Timer
A0–A18
Y decoder
X decoder
Y gating
Cell matr
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A11 1
A9 2
A8 3
A13 4
A14 5
A17 6
WE 7
V_CC 8
A18 9
A16 10
A15 11
A12 ¹²
A7 13
A6 14
A5 15
A4 16
AS29F040
32-pin TSOP
32 OE
31 A10
30 CE
29 DQ7
28 DQ6
27 DQ5
26 DQ4
25 DQ3
24 V_SS
23 DQ2
22 DQ1
21 DQ0
32-pin PLCC
20 A0
19 A1
18 A2
A12
A16 V_CC
A17
A15 A18 WE
17 A3
4 3 2 1 32 31 30
A7 5
29 A14
A6 6
28 A13
A5 7
27 A8
A4 8
A3 9
AS29F040
26 A9
25 A11
A2 10
24 OE
A1 11
23 A10
A0 12
22 CE
DQ0 13
21 DQ7
14 15 16 17 18 19 20
DQ1
V_SS
DQ4 DQ6
DQ2 DQ3 DQ5
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AS29F040-55 AS29F040-70 AS29F040-90 AS29F040-120 AS29F040-150 Unit
Maximum access time
t_AA 55
70
90
120
150
ns
Maximum chip enable access time t_CE 55
70
90
120
150
ns
Maximum output enable access time t_OE 25
30
35
50
55
ns
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