AS29F010 Datasheet, PDF (1/10 Pages) Alliance Semiconductor Corporation – 5V 128K x 8 CMOS FLASH EEPROM

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• Organization: 128K × 8 bits
• Sector Erase architecture
- Four 32K × 8 sectors
• Single 5.0±0.5V power supply for read/write operations
• High speed 120/150 ns address access time
• Low power consumption:
- 30 mA maximum read current
- 50 mA maximum program current
- 1.5 mA maximum standby current
- 1 mA maximum standby current (low power)
• 10,000 write/erase cycle endurance
• JEDEC standard write cycle commands
- protects data from accidental changes
• Program/erase cycle end signals:
- Data polling
- DQ6 toggle
• Low V_CC write lock-out below 3.2V
• JEDEC standard packages and pinouts:
- 32-pin DIP
- 32-pin PLCC
- 32-pin TSOP
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V_CC
V_SS
WE
State
control
Command
register
Erase voltage
switch
Program voltage
switch
Chip enable
CE
Output enable
OE
Logic
Low V_CC detector
Program/erase
pulse timer
A₀~A₁₆
Y-Decoder
X-Decoder
DQ₀~DQ₇
Input/output
buffers
Data
latch
Y-Gating
1,048,576 bit
Cell matrix
3LQ#DUUDQJHPHQW
32-pin
PDIP
NC
1
A16
2
A15
3
A12
4
A7
5
A6
6
A5
7
A4
8
A3
9
A2
10
A1
11
A0
12
DQ0
13
DQ1
14
DQ2
15
V_SS
16
32
V_CC
31
WE
30
NC*
29
A14
28
A13
27
A8
26
A9
25
A11
24
OE
23
A10
22
CE
21
DQ7
20
DQ6
19
DQ5
18
DQ4
17
DQ3
32-pin
PLCC
A7
5
29
A14
A6
6
28
A13
A5
7
27
A8
A4
A3
8
9
AS29F010
26
25
A9
A11
A2
10
24
OE
A1
11
23
A10
A0
12
22
CE
DQ0
13
21
DQ7
A11
1
A9
2
A8
3
A13
4
A14
5
NC
6
WE
7
V_CC
8
NC
9
A16
10
A15
11
A12
12
A7
13
A6
14
A5
15
A4
16
32-pin
TSOP
AS29F010
32
OE
31
A10
30
CE
29
DQ7
28
DQ6
27
DQ5
26
DQ4
25
DQ3
24
V_SS
23
DQ2
22
DQ1
21
DQ0
20
A0
19
A1
18
A2
17
A3
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Maximum access time
Chip enable access time
Output enable access time
AS29F010-120
AS29F010-150
Unit
t_AA
120
150
ns
t_CE
120
150
ns
t_OE
50
50
ns
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