DMK2783-000 Datasheet, PDF (1/4 Pages) Alpha Industries – GaAs Flip Chip Schottky Diodes

GaAs Flip Chip Schottky Diodes
Features
I Designed for High Volume Designs
I High Frequency (20–100 GHz)
I Exceeds Environmental Requirements for
MIC & Hybrid Applications
I Designed for Low Junction Capacitance
and Low Series Resistance
I Applications Include PCN Mixers and
Circuits, As Well As Low Power, Fast
Switching
I Low Parasitic Flip Chip Configuration
Single - DMK2783-000, DMK2790-000
Anti-Parallel - DMK2308-000
Series Pair - DMK8001-000
Description
This new series of GaAs Schottky barrier diodes offer high
performance at commercial market prices. They are
designed for low junction capacitance, as well as low series
resistance. Diodes are designed for MIC work (hard and soft
substrates), but the leadless design eliminates the
problems associated with mounting of beam lead diodes.
Due to its rigid construction, it exceeds environmental
requirements for MIC and hybrid applications. Diodes can
be supplied on expandable film frame for high speed pick
and place process. Standard packing will be in a gel pack.
Flexible conductive epoxy is the most effective
method for circuitry attachments. Standard mounting
temperatures should not exceed 175°C.
Electrical Specifications at 25°C
Recommended
Frequency
(GHz)
V_B¹
@ 10 µA
(V)
C_T²
0 V, 1 MHz
(pF)
R_S @ 10 mA
(Ω)
Min. Max.
Max.
20–100
3.0
0.03 0.05
9
20–100
3.0
0.04 0.07
7
20–100
3.0
0.05 0.08
7
1. V_B cannot be measured nondestructively in anti-parallel configuration.
2. C_T = junction capacitance plus 0.02 pF (overlay).
V_F @ 1 mA
(mV)
Min. Max.
680 780
650 750
650 750
Single
540-011
DMK2783-000
DMK2790-000
Series Pair
540-012
DMK8001-000
Anti-Parallel
540-025
DMK2308-000
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com
1
Specifications subject to change without notice. 3/00A