AS192-300 Datasheet, PDF (1/2 Pages) Alpha Industries – PHEMT GaAs IC High Power SP4T Switch 0.1-2.5 GHz

PHEMT GaAs IC High Power
SP4T Switch 0.1–2.5 GHz
Features
s 4 Symmetric RF Paths
s Positive Voltage Control
s High IP3
s Excellent Harmonic Performance
s Handles GSM Power Levels
s Available in MLF-16 (4 x 4 mm) Package
Description
The AS192-300 is a reflective SP4T switch. It is an ideal
switch for higher power applications. It can be used for
GSM dual band handset applications where both low loss,
low current and small size are critical parameters.
AS192-300
MLF-16 (4 x 4 mm)
0.157 (4.00 mm) BSC
0.148 ^{0.039 (1.00 mm) MAX.}
PIN 1
INDICATOR
16
(3.75 mm)
BSC
0.001
(0.025 mm)
0.148
1
2
(3.75 mm) 3
BSC
0.157
(4.00 mm)
BSC
12˚
MAX.
± 0.001
(0.025 mm)
0.067 (1.70 mm)
± 0.006 (0.15 mm)
0.067 (1.70 mm)
± 0.006 (0.15 mm)
0.026 (0.65 mm) BSC
SEATING
PLANE
16
1
2
0.078
3 _{(1.95 mm) REF.}
0.078 (1.95 mm) REF.
Electrical Specifications at 25°C (0, +4.5 V)
Insertion Loss
Parameter
Ant-J₁, J₂, J₃, J₄
Isolation
Ant-J₁, J₂, J₃, J₄
VSWR
Frequency
0.1–0.5 GHz
0.5–1.0 GHz
1.0–2.0 GHz
2.0–2.5 GHz
0.1–0.5 GHz
0.5–1.0 GHz
1.0–2.0 GHz
2.0–2.5 GHz
0.1–1.0 GHz
1.0–2.5 GHz
Operating Characteristics at 25°C (0, +4.5 V)
Parameter
Switching Characteristics
IP3
2nd and 3rd Harmonics
Control Voltages
Condition
Frequency
Rise, Fall (10/90% or 90/10% RF)
On, Off (50% CTL to 90/10% RF)
Video Feedthru
13 dBm/Tone
34 dBm Input 900 MHz
V_Low = 0
V_High = +4.5 V @ 200 µA Max. for RF power > 30 dBm
V_High = +3.0 V @ 200 µA Max. for RF power 20–30 dBm
V_High = +2.7 V @ 200 µA Max. for RF power < 20 dBm
Min.
30
25
19
18
Typ. Max. Unit
0.90
1.1
dB
0.95
1.1
dB
1.00
1.2
dB
1.10
1.3
dB
34
dB
29
dB
23
dB
21
dB
1.3:1
1.4:1
Min.
Typ.
50
100
50
+55
+65
Max.
Unit
ns
ns
mV
dBm
dBc
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com
1
Specifications subject to change without notice. 2/01A