AO9926 Datasheet, PDF (1/6 Pages) Alpha Industries – Dual N-Channel Enhancement Mode Field Effect Transistor

Feb 2003
AO9926
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO9926 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. They
offer operation over a wide gate drive range from 1.8V
to 8V. The two devices may be used individually, in
parallel or to form a bidirectional blocking switch.
Features
V_DS (V) = 20V
I_D = 5A
R_DS(ON) < 50mΩ (V_GS = 4.5V)
R_DS(ON) < 65mΩ (V_GS = 2.5V)
R_DS(ON) < 90mΩ (V_GS = 1.8V)
S2 1 8 D2
G2 2 7 D2
S1 ^{3 6} D1
G1 ^{4 5} D1
SOIC-8
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
20
±8
5
4.2
20
2
1.28
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
56
81
Steady-State
R_θJL
40
Max
62.5
110
48
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.