AO8800 Datasheet, PDF (1/6 Pages) Alpha Industries – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

July 2001
AO8800
Common-Drain Dual N-Channel Enhancement Mode
Field Effect Transistor
General Description
Features
The AO8800 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V_GS(MAX) rating. This device is
suitable for use as a uni-directional or bi-directional
load switch, facilitated by its common-drain
configuration.
V_DS (V) = 30V
I_D = 6.4A
R_DS(ON) < 24mΩ (V_GS = 10V)
R_DS(ON) < 30mΩ (V_GS = 4.5V)
R_DS(ON) < 40mΩ (V_GS = 2.5V)
R_DS(ON) < 70mΩ (V_GS = 1.8V)
D1/D2
S1
S1
G1
TSSOP-8
Top View
1
8
2
7
3
6
4
5
D1/D2
S2
S2
G2
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±12
Continuous Drain T_A=25°C
6.4
Current ^A
T_A=70°C
I_D
5.4
Pulsed Drain Current ^B
I_DM
30
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
1.5
1.08
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
64
89
83
120
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
53
70
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.