AO4406 Datasheet, PDF (1/7 Pages) Alpha Industries – N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

March 2002
AO4406
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4406 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device makes an excellent high side switch for
notebook CPU core DC-DC conversion.
Features
V_DS (V) = 30V
I_D = 11.5A
R_DS(ON) < 14mΩ (V_GS = 10V)
R_DS(ON) < 16.5mΩ (V_GS = 4.5V)
R_DS(ON) < 26mΩ (V_GS = 2.5V)
S
D
S
D
S
D
G
D
SOIC-8
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Avalanche Current ^B,E
I_AV
Repetitive Avalanche Energy ^B,E L=0.1mH E_AV
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
11.5
9.6
80
25
78
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
23
48
40
65
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
12
16
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W