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AO4405 Datasheet, PDF (1/4 Pages) Alpha Industries – P-Channel Enhancement Mode Field Effect Transistor
Rev 3: Nov 2004
AO4405, AO4405L ( Green Product )
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4405 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a load switch or in PWM
applications. AO4405L( Green Product ) is offered in
a lead-free package.
Features
VDS (V) = -30V
ID = -6.0A
RDS(ON) < 50mΩ (VGS = -10V)
RDS(ON) < 85mΩ (VGS = -4.5V)
SOIC-8
Top View
S
D
S
D
S
D
G
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
ID
Pulsed Drain Current B
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±20
-6.0
-5.1
-30
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
31
59
40
75
Maximum Junction-to-Lead C
Steady-State
RθJL
16
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.