AM035N4-00 Datasheet, PDF (1/2 Pages) Alpha Industries – 32-37 GHz GaAs MMIC Ring Hybrid Mixer

32–37 GHz GaAs MMIC
Ring Hybrid Mixer
Features
I Low Conversion Loss, 6.0 dB
I Low LO Power Requirement, 9 dBm
I High LO to RF Isolation, 28 dB
I No DC Bias Required
Description
Alpha’s ring hybrid GaAs Schottky diode mixer has a
typical conversion loss of 6.0 dB at an LO power level as
low as 9 dBm over the band 32–37 GHz. The chip uses
Alpha’s proven Schottky diode technology, and is based
upon MBE layers for the highest uniformity and
repeatability. The diodes employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
an epoxy die attach process. All chips are screened for
DC diode parameters and lot samples are RF measured
to guarantee performance.
Electrical Specifications at 25°C
RF and LO Frequency Range
Parameter
IF Frequency Range
LO Power Level
Conversion Loss¹
RF and LO Return Loss¹
LO to RF Isolation¹
LO to IF Isolation¹
RF Input 1 dB Compression Point¹
Individual Diode Series Resistance
1. Not measured on a 100% basis.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
Chip Outline
2.800
2.027
AM035N4-00
2.471
0.000
0.541
Dimensions indicated in mm.
All pads are ≥ 0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Operating Temperature
Storage Temperature
Total Input Power (RF + LO)
Value
-55°C to +125°C
-65°C to +150°C
20 dBm
Symbol
F_RF, F_LO
F_IF
P_LO
L_C
RL_RF, RL_LO
ISO_LO-RF
ISO_LO-IF
P_{1 dB}
R_S
Min.
Typ.²
32–37
0–3
9–19
6
9
28
35
10
Max.
4.0
Unit
GHz
GHz
dBm
dB
dB
dB
dB
dBm
Ω
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com
1
Specifications subject to change without notice. 2/00A