AFM06P3-212 Datasheet, PDF (1/3 Pages) Alpha Industries – Ka Band Power GaAs MESFET Chips

Ka Band Power GaAs MESFET Chips
AFM06P3-212, AFM06P3-213
Features
s 22 dBm Output Power @ 18 GHz
s High Associated Gain, 9 dB @ 18 GHz
s High Power Added Efficiency, 23%
s Broadband Operation, DC–18 GHz
s 0.25 µm Ti/Pd/Au Gates
s Passivated Surface
Description
The AFM06P3-212, 213 are high performance power
GaAs MESFET chips in an industry standard ceramic
micro-x package, having a gate length of 0.25 µm and a
total gate periphery of 600 µm. These devices have
excellent gain and power performance through 26 GHz,
making them suitable for a wide range of commercial and
military applications in oscillator and amplifier circuits. They
employ Ti/Pd/Au gate metallization and surface
passivation to ensure a rugged, reliable part.
213
Drain
Source
Drain
Source
Gate
Source
Source
Gate
212
Absolute Maximum Ratings
Characteristic
Drain to Source Voltage (V_DS)
Gate to Source Voltage (V_GS)
Drain Current (I_DS)
Gate Current (I_GS)
Total Power Dissipation (P_T)
Storage Temperature (T_ST)
Channel Temperature (T_CH)
Value
6V
-4 V
I_DSS
1 mA
1.1 W
-65 to +150°C
175°C
Electrical Specifications at 25°C
Parameter
Saturated Drain Current (I_DSS)
Transconductance (gm)
Pinch-Off Voltage (V_P)
Gate to Drain Breakdown
Voltage (V_bgd)
Output Power at 1 dB
Compression (P_{1 dB})
Gain at 1 dB Compression (G_{1 dB})
Power Added Efficiency (ηadd)
Test Conditions
V_DS = 2 V, V_GS = 0 V
V_DS = 5 V, I_DS = 1.5 mA
I_GD = 600 µA
V_DS = 5 V, I_DS = 70 mA, F = 18 GHz
Min.
130.0
90.0
1.0
8.0
Typ.
200.0
120.0
3.0
12.0
22.0
9.0
23.0
Max.
270.0
5.0
Unit
mA
mS
V
V
dBm
dB
%
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com
1
Specifications subject to change without notice. 6/99A