AFM04P3-213 Datasheet, PDF (1/3 Pages) Alpha Industries – Low Noise/Medium Power GaAs MESFET Chips

Low Noise/Medium Power
GaAs MESFET Chips
Features
s Low Noise Figure, 0.6 dB @ 4 GHz
s 20 dBm Output Power @ 18 GHz
s High Associated Gain, 13 dB @ 4 GHz
s High Power Added Efficiency, 25%
s Broadband Operation, DC–26 GHz
s Available in Tape and Reel Packaging
Description
The AFM04P3-212, 213 are high performance power
GaAs MESFET chips having a gate length of 0.25 µm and
a total gate periphery of 400 µm. These devices have
excellent gain and power performance through 26 GHz,
making them suitable for a wide range of commercial and
military applications in oscillator and amplifier circuits. They
also have excellent noise performance and can be used
in the first and second stage of low noise amplifier design.
The AFM04P3 employs Ti/Pd/Au gate metallization and
surface passivation to ensure a rugged, reliable part.
AFM04P3-212, AFM04P3-213
213
Drain
Source
Drain
Source
Gate
Source
Source
Gate
212
Absolute Maximum Ratings
Characteristic
Drain to Source Voltage (V_DS)
Gate to Source Voltage (V_GS)
Drain Current (I_DS)
Gate Current (I_GS)
Total Power Dissipation (P_T)
Storage Temperature (T_ST)
Channel Temperature (T_CH)
Value
6V
-4 V
I_DSS
1 mA
700 mW
-65 to +150°C
175°C
Electrical Specifications at 25°C
Parameter
Saturated Drain Current (I_DSS)
Transconductance (gm)
Pinch-Off Voltage (V_P)
Gate to Drain Breakdown
Voltage (V_bgd)
Noise Figure (NF)
Associated Gain (G_A)
Output Power at 1 dB
Compression (P_{1 dB})
Gain at 1 dB Compression (G_{1 dB})
Power Added Efficiency (ηadd)
Test Conditions
V_DS = 2 V, V_GS = 0 V
V_DS = 5 V, I_DS = 1 mA
I_GD = -400 µA
V_DS = 2 V, I_DS = 25 mA, F = 4 GHz
V_DS = 5 V, I_DS = 70 mA, F = 18 GHz
Min.
90.0
60.0
1.0
8.0
Typ.
140.0
80.0
3.0
12.0
0.6
13.8
20.0
9.0
25.0
Max.
190.0
5.0
Unit
mA
mS
-V
-V
dB
dB
dBm
dB
%
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com
1
Specifications subject to change without notice. 6/99A