AFM04P3-000 Datasheet, PDF (1/2 Pages) Alpha Industries – Low Noise/Medium Power GaAs MESFET Chip

Low Noise/Medium Power
GaAs MESFET Chip
Features
s 21 dBm Output Power @ 18 GHz
s High Associated Gain, 9 dB @ 18 GHz
s High Power Added Efficiency, 25%
s Broadband Operation, DC–26 GHz
s 0.25 µm Ti/Pd/Au Gates
s Passivated Surface
Description
The AFM04P3-000 is a high performance power GaAs
MESFET chip having a gate length of 0.25 µm and a total
gate periphery of 400 µm. The device has excellent gain
and power performance through 26 GHz, making it
suitable for a wide range of commercial and military
applications in oscillator and amplifier circuits. The device
employs Ti/Pd/Au gate metallization and surface
passivation to ensure a rugged, reliable part.
Chip Layout
AFM04P3-000
Absolute Maximum Ratings
Characteristic
Drain to Source Voltage (V_DS)
Gate to Source Voltage (V_GS)
Drain Current (I_DS)
Gate Current (I_GS)
Total Power Dissipation (P_T)
Storage Temperature (T_ST)
Channel Temperature (T_CH)
Value
6V
-4 V
I_DSS
1 mA
700 mW
-65 to +150°C
175°C
Electrical Specifications at 25°C
Parameter
Saturated Drain Current (I_DSS)
Transconductance (gm)
Pinch-off Voltage (V_P)
Gate to Drain
Breakdown Voltage (V_bgd)
Noise Figure (NF)
Associated Gain (G_A)
Output Power at 1 dB
Compression (P_{1 dB})
Gain at 1 dB Compression (G_{1 dB})
Power Added Efficiency (ηadd)
Thermal Resistance (Θ_JC)
Test Conditions
V_DS = 2 V, V_GS = 0 V
V_DS = 5 V, I_DS = 1 mA
I_GD = -400 µA
V_DS = 2 V, I_DS = 25 mA, F = 4 GHz
V_DS = 5 V, I_DS = 70 mA, F = 18 GHz
T_BASE = 25°C
Min.
90.0
60.0
1.0
8.0
Typ.
140.0
80.0
3.0
12.0
0.6
13.8
21.0
9.0
25.0
Max.
190.0
5.0
250.0
Unit
mA
mS
-V
-V
dB
dB
dBm
dB
%
°C/W
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com
1
Specifications subject to change without notice. 6/99A