AF002C1-39 Datasheet, PDF (1/4 Pages) Alpha Industries – GaAs IC Control FET Series DC-2.5 GHz

GaAs IC Control FET Series
DC–2.5 GHz
Features
s Low Cost SOT-23 Package
s Series or Shunt Configuration
s Low DC Current Drain
s Ideal Switch Building Blocks
s Pin Diode Replacements
s High Power Antenna Switches
Description
This group of GaAs control FETs can be used in both
series and shunt configurations. They incorporate on-chip
circuitry that eliminates the need for extra bias
components and minimizes power drain to typically 25 µW.
These features make the device ideal replacements for
PIN diodes, where low DC drain is critical.
Isolation performance degrades at higher frequencies due
to package parasitics. They can be tuned out in narrow
band applications as shown in the circuit examples on the
following pages.
AF002C1-39, AF002C4-39
SOT-23
0.120 (3.05 mm)
0.110 (2.79 mm)
0.018 (0.45 mm)
3 _{0.015 (0.38 mm)}
0.055 (1.40 mm)
0.047 (1.19 mm)
0.104 (2.64 mm)
0.083 (2.10 mm)
0.024 (0.61 mm)
1
0.018 (0.45 mm)
0.080 (2.03 mm)
0.070 (1.78 mm)
2
0.040 (1.02 mm)
0.037 (0.94 mm)
0.007 (0.18 mm)
0.003 (0.08 mm)
0.004 (0.10 mm)
0.027 (0.69 mm) REF. 0.0005 (0.01 mm)
0.045
(1.14 mm)
0.035
(0.89 mm)
Electrical Specifications at 25°C (0, -5 V)
Part Number¹
AF002C1-39
AF002C4-39
Frequency²
(GHz)
DC–0.5 GHz
DC–1.0 GHz
DC–2.5 GHz
DC–0.5 GHz
DC–1.0 GHz
DC–2.5 GHz
R_ON (Ω)³
Typ.
Max.
6.4
9.0
6.4
9.0
6.4
9.0
0.8
1.1
0.8
1.1
0.8
1.1
Insertion Loss (dB)^4,5
Series
Shunt
0.50
0.10
0.60
0.15
0.70
0.20
0.20
0.15
0.25
0.25
0.30
2.00
C_OFF (pF)⁶
Typ. Max.
0.13
0.25
0.13
0.25
0.13
0.25
1.10
1.50
1.10
1.50
1.10
1.5
Isolation (db)⁵
Series Shunt
25
12
17
8
13
3
11
15
6
9
3
4
P_{-1 dB} (W)
Typ.
0.5
1.0
1.0
6
10
10
Operating Characteristics at 25°C (0, -5 V)
Parameter
Condition
Frequency
Switching Characteristics
Rise, Fall (10/90% or 90/10% RF)
On, Off (50% CTL to 90/10% RF)
Control Voltages
V_Low = 0 to -0.2 V @ 20 µA Max.
V_High = -5 V @ 50 µA to -9 V @ 200 µA Max.
1. All measurements made in a 50 Ω system, unless otherwise specified.
2. DC = 300 kHz.
3. R_ON - resistance in Ω in low impedance state when “0” V is applied to Gate (G).
4. Insertion loss changes by 0.003 dB/°C.
5. Insertion loss and isolation typical values.
6. C_OFF - capacitance (pF) in high impedance state when -5 V is applied to Gate (G).
Min.
Typ. Max. Unit
6
ns
12
ns
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com
1
Specifications subject to change without notice. 3/99A