A8735 Datasheet, PDF (4/16 Pages) Allegro MicroSystems – Ultra Small Mobile Phone Xenon Photoflash Capacitor Charger with IGBT Driver

A8735
Ultra Small Mobile Phone Xenon Photoflash
Capacitor Charger with IGBT Driver
ELECTRICAL CHARACTERISTICS Typical values are valid at V_IN = V_BAT = 3.6 V; T_A = 25°C, except
guaranteed from −40°C to 85°C ambient, unless otherwise noted
Characteristics
Symbol
Test Conditions
VBAT Voltage Range¹
VIN_DRV Voltage Range¹
UVLO Enable Threshold
UVLO Hysteresis
V_BAT
V_IN
V_INUV
V_INUV(hys)
V_IN rising
Shutdown (CHARGE = 0 V, TRIG = 0 V)
V_IN Supply Current
VBAT Pin Supply Current
I_IN
Charging complete
Charging (CHARGE = V_IN, TRIG = 0 V)
Shutdown (CHARGE = 0 V, TRIG = 0 V)
I_BAT
Charging done (CHARGE = V_IN,
¯D¯¯O¯¯N¯¯E¯ = 0 V)
Current Limit
Charging (CHARGE = V_IN, TRIG = 0 V)
Primary-Side Current Limit²
Switch On-Resistance
Switch Leakage Current¹
CHARGE Input Current
CHARGE Input Voltage¹
I_SWLIM
R_SWDS(on)
I_SWLK
I_CHARGE
V_CHARGE
V_{IN_DRV} = 3.6 V, I_D = 600 mA, T_A = 25°C
V_SW = 5.5, over full temperature range
V_CHARGE = V_IN
High, over input supply range
Low, over input supply range
CHARGE On/Off Delay
t_CH
Time between CHARGE = 1 and charging
enabled
Switch-Off Timeout
Switch-On Timeout
Output Comparator Trip Voltage³
Output Comparator Voltage Overdrive
¯D¯¯O¯¯N¯¯E¯ Output Leakage Current1
¯D¯¯O¯¯N¯¯E¯ Output Low Voltage1
dV/dt Threshold for ZVS Comparator
t_off(max)
t_on(max)
V_OUTTRIP
V_OUTOV
I_DONELK
V_DONEL
dV/dt
Measured as V_SW – V_BAT
Pulse width = 200 ns (90% to 90%)
32 μA into ¯D¯¯O¯¯N¯¯E¯ pin
Measured at SW pin
IGBT Driver
TRIG Input Voltage¹
V_TRIG(H)
V_TRIG(L)
Input = logic high, over input supply range
Input = logic low, over input supply range
TRIG Pull-Down Resistor
R_TRIGPD
GATE Resistance to VIN_DRV
R_SrcDS(on) V_GATE = 1.8 V
GATE Resistance to GND
Propagation Delay (Rising)^4,5
R_SnkDS(on)
t_Dr
V_GATE = 1.8 V
Measurement taken at ¯D¯¯O¯¯N¯¯E¯ pin,
C_L= 6500 pF
Propagation Delay (Falling)^4,5
t_Df
Output Rise Time^4,5
t_r
Output Fall Time^4,5
t_f
GATE Pull-Down Resistor
R_GTPD
1_{Specifications throughout the range TA = –40°C to 85°C guaranteed by design and characterization.}
2_{Current limit guaranteed by design and correlation to static test.}
3_{Specifications throughout the range TA = –20°C to 85°C guaranteed by design and characterization.}
4_{Guaranteed by design and characterization.}
5_{See IGBT Drive Timing Definition diagram for further information.}
indicates specifications
Min. Typ. Max. Unit
1.5 – 5.5 V
2.3 – 5.5 V
– 2.05 2.2 V
– 150 – mV
– 0.02 0.5 μA
–
50 100 μA
–
2
– mA
– 0.01 1
μA
–
–
5
μA
–
–
50 μA
0.9 1.0 1.1 A
– 0.4 –
Ω
–
–
2
μA
–
36
–
μA
1.0 –
–
V
–
– 0.4 V
–
20
–
us
–
18
–
μs
–
18
–
μs
31.0 31.5 32.0 V
– 200 400 mV
1
μA
–
– 100 mV
–
20
– V/μs
1
–
–
V
–
– 0.4 V
– 100 –
kΩ
–
21
–
Ω
–
27
–
Ω
–
25
–
ns
–
60
–
ns
– 290 –
ns
– 380 –
ns
–
20
–
kΩ
Allegro MicroSystems, Inc.
4
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com