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A1366 Datasheet, PDF (1/22 Pages) Allegro MicroSystems – Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC
A1366
Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC
With Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output
Features and Benefits
• Factory programmed sensitivity and quiescent output
voltage with high resolution
• Proprietary segmented linear interpolated temperature
compensation (TC) technology provides a typical accu-
racy of 1% across the full operating temperature range
• Extremely low noise and high resolution achieved
via proprietary Hall element and low noise amplifier
circuits
• 120 kHz nominal bandwidth achieved via proprietary
packaging and chopper stabilization techniques
• Patented circuits suppress IC output spiking during fast
current step inputs
• Open circuit detection on ground pin (broken wire)
• Undervoltage lockout for VCC below specification
Continued on the next page…
Package: 4-pin SIP (suffix KT)
1 mm case thickness
Not to scale
Description
The Allegro™ A1366 factory-programmable linear Hall-
effect current sensor IC has been designed to achieve high
accuracy and resolution. The goal is achieved through new
proprietary linearly interpolated temperature compensation
technology that is programmed at the Allegro factory, which
provides sensitivity and offset that are virtually flat across
the full operating temperature range. The flat performance
over temperature makes this IC ideally suited for current
sensing applications. Temperature compensation is done in
the digital domain with integrated EEPROM technology
without sacrificing the analog signal path bandwidth, making
this device ideal for HEV inverter, DC-to-DC converter, and
electric power steering (EPS) applications.
This ratiometric Hall-effect sensor IC provides a voltage output
that is proportional to the applied magnetic field. Sensitivity and
quiescent (zero field) output voltage are factory programmed
with high resolution which provides for an accuracy of less
than ±1%, typical, over temperature.
The sensor IC incorporates a highly sensitive Hall element with
a BiCMOS interface integrated circuit that employs a low noise,
small-signal high-gain amplifier, as well as a low-impedance
output stage, and a proprietary, high bandwidth dynamic offset
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V+
VCC
Functional Block Diagram
To all subcircuits
Programming
Control
C BYPASS
Temperature
Sensor
EEPROM and
Control Logic
Sensitivity Control
Offset Control
A1366-DS
GND
Signal Recovery
VOUT
CL