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| ALD1105_12 Datasheet, PDF (2/9 Pages) Advanced Linear Devices – DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR | |||
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ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS
Gate-source voltage, VGS
Power dissipation
Operating temperature range SBL, PBL packages
DB package
Storage temperature range
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
10.6V
10.6V
500mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
N - Channel
Parameter Symbol Min Typ Max Unit
Gate Threshold VT
Voltage
0.4 0.7 1.0 V
Test
Conditions
IDS = 1µA VGS = VDS
Offset Voltage VOS
VGS1 - VGS2
2
10 mV
IDS = 10µA VGS = VDS
Gate Threshold
Temperature TCVT
-1.2
mV/°C
Drift
On Drain
Current
IDS (ON) 3 4.8
mA
VGS = VDS = 5V
Trans-.
Gfs
conductance
1 1.8
mmho VDS = 5V IDS= 10mA
Mismatch
Output
Conductance
âGfs
GOS
0.5
%
200
µmho VDS = 5V IDS = 10mA
Drain Source RDS(ON)
ON Resistance
350 500 â¦
VDS = 0.1V VGS = 5V
Drain Source
ON Resistance âRDS(ON)
0.5
Mismatch
%
VDS = 0.1V VGS = 5V
Drain Source
Breakdown
Voltage
BVDSS 12
V
IDS = 1µA VGS =0V
Off Drain
Current
IDS(OFF)
Gate Leakage IGSS
Current
Input
Capacitance
CISS
10 400 pA
4 nA
0.1 30 pA
1 nA
1
3 pF
VDS =12V IGS = 0V
TA = 125°C
VDS = 0V VGS =12V
TA = 125°C
P - Channel
Min Typ Max Unit
-0.4 -0.7 -1.0 V
Test
Conditions
IDS = -1µA VGS = VDS
2 10 mV
IDS = -10µA VGS = VDS
-1.3
mV/°C
-1.3 -2
mA
VGS = VDS = -5V
0.25 0.67
mmho VDS = -5V IDS= -10mA
0.5
%
40
µmho VDS = -5V IDS = -10mA
1200 1800 â¦
VDS = -0.1V VGS = -5V
0.5
%
VDS = -0.1V VGS = -5V
-12
V
10 400 pA
4 nA
1 30 pA
1 nA
1
3 pF
IDS = -1µA VGS =0V
VDS = -12V VGS = 0V
TA = 125°C
VDS = 0V VGS =-12V
TA = 125°C
ALD1105
Advanced Linear Devices
2 of 9
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