ALD1115_11 Datasheet, PDF (1/8 Pages) Advanced Linear Devices – COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET

ADVANCED
LINEAR
DEVICES, INC.
COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET
ALD1115
GENERAL DESCRIPTION
The ALD1115 is a monolithic complementary N-channel and P-channel
transistor pair intended for a broad range of analog applications. These
enhancement-mode transistors are manufactured with Advanced Linear
Devices' enhanced ACMOS silicon gate CMOS process. It consists of
a N-channel MOSFET and a P-channel MOSFET in one package. The
ALD1115 is a dual version of the quad complementary ALD1105.
The ALD1115 offers high input impedance and negative current
temperature coefficient. The transistor pair is designed for precision
signal switching and amplifying applications in +1V to +12V systems
where low input bias current, low input capacitance and fast switching
speed are desired. Since these are MOSFET devices, they feature very
large (almost infinite) current gain in a low frequency, or near DC,
operating environment. When connected in parallel with sources, drains
and gates connected together, a CMOS analog switch can be constructed.
In addition, the ALD1115 is intended as a building block for CMOS
inverters, differential amplifier input stages, transmission gates, and
multiplexer applications.
APPLICATIONS
• Precision current mirrors
• Complementary push-pull linear drives
• Discrete analog switches
• Analog signal choppers
• Differential amplifier input stage
• Voltage comparator
• Data converters
• Sample and Hold
• Analog current inverter
• Precision matched current sources
• CMOS inverter stage
• Diode clamps
• Source followers
PIN CONFIGURATION
The ALD1115 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the field effect
transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which
is specified at 30pA at room temperature. V+ is connected to the
substrate, which is the most positive voltage potential of the ALD1115,
usually SP (5). Similarly, V- is connected to the most negative voltage
potential of the ALD1115, usually SN (1).
FEATURES
• Thermal tracking between N-channel and P-channel
• Low threshold voltage of 0.7V for both N-channel
and P-channel MOSFETs
• Low input capacitance
• High input impedance -- 10¹³â„¦ typical
• Low input and output leakage currents
• Negative current (I_DS) temperature coefficient
• Enhancement mode (normally off)
• DC current gain 10⁹
• Single N-channel MOSFET and single P-channel
MOSFET in one package
SN 1
GN 2
DN ³
V^- 4
8 V⁺
7 DP
6 _GP
5 SP
TOP VIEW
SAL, PAL PACKAGES
BLOCK DIAGRAM
GN (2)
DN (3)
SN (1)
V- (4)
ORDERING INFORMATION ("L"suffix for lead free version)
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
GP (6)
8-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
ALD1115SAL
ALD1115PAL
* Contact factory for leaded (non-RoHS) or high temperature versions.
DP (7)
SP (5)
V+ (8)
Rev 2.0 ©2011 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: [phone] Fax: [phone]
www.aldinc.com