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ALD1108E_12 Datasheet, PDF (1/14 Pages) Advanced Linear Devices – QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD™)
ADVANCED
LINEAR
DEVICES, INC.
TM
e®
EPAD
D
E
L
B
A
N
E
ALD1108E/ALD1110E
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD™)
GENERAL DESCRIPTION
ALD1108E/ALD1110E are monolithic quad/dual EPAD® (Electrically
Programmable Analog Device) N-channel MOSFETs with electrically
adjustable threshold (turn-on) voltage. The ALD1108E/ALD1110E are
matched and adjusted (e-trimmed) at the factory resulting in quad/dual
MOSFETs that are highly matched in threshold voltages and other electrical
characteristics. For a given input voltage, the threshold voltage of a
MOSFET device determines its drain on-current, resulting in an on-
resistance characteristic that can be precisely preset and then controlled by
the input voltage very accurately.
Using an ALD1108E/ALD1110E is simple and straight forward. The
MOSFETs function as n-channel MOSFETs, except that all the devices
have exceptional matching to each other in electrical characteristics. Since
these devices are on the same monolithic chip, they also exhibit excellent
tempco matching characteristics.
These MOSFET devices have very low input currents, and as a result a very
high input impedance (>1012 Ohm). The gate voltage from a control source
can drive many MOSFET inputs with practically no loading effects. Used in
precision current mirror or current multiplier applications, they can be used
to provide a current source over a 100nA to 3mA range, and with either a
positive, negative or zero tempco.
BENEFITS
• Precision matched electrically after
packaging
• Simple, elegant single-chip user option
to trim voltage/current values
• Excellent device matching characteristics
with or without additional electrical trim
• Remotely and electrically trim parameters
on circuits that are physically inaccessible
PIN CONFIGURATION
ALD1110E
PN1
GN1
DN1
S12, V-
1 EPAD 1
2
3
4
EPAD 2 8
7
6
v+ 5
PN2
GN2
DN2
V+
TOP VIEW
SAL, PAL, DA PACKAGES
ALD1108E
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
-55°C to +125°C
8-Pin SOIC
Package
ALD1110ESAL
8-Pin Plastic Dip
Package
ALD1110EPAL
8-Pin CERDIP
Package
ALD1110EDA
16-Pin SOIC
Package
16-Pin Plastic Dip
Package
16-Pin CERDIP
Package
ALD1108ESCL
ALD1108EPCL
ALD1108EDC
* Contact factory for leaded (non-RoHS) or high temperature versions.
BLOCK DIAGRAM
ALD1108E
PN (1)
GN1(2)
DN1 (3)
DN2 (14)
V+(13)
PN2 (16)
PN3 (9)
~
GN2 (15) GN3(10)
DN3 (11)
DN4 (6)
PN4 (8)
GN4 (7)
PN1
GN1
DN1
S12
V-
DN4
GN4
PN4
1 EPAD 1
2
3
4
5 v-
6
7
8
EPAD 4
EPAD 2 16
15
14
v+ 13
PN2
GN2
DN2
V+
12
11
10
9
EPAD 3
S34
DN3
GN3
PN3
TOP VIEW
SCL, PCL, DC PACKAGES
BLOCK DIAGRAM
ALD1110E
PN1 (1)
GN1(2)
V+(5)
DN1 (3)
DN2 (6)
~
PN2 (8)
GN2 (7)
EPAD 1
EPAD 2
S12 (4)
~
EPAD 3
EPAD 4
V- (5)
S34 (12)
EPAD 1
~ EPAD 2
S12 (4)
V- (4)
Rev 2.0 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com