ALD110814 Datasheet, PDF (1/2 Pages) Advanced Linear Devices – QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY

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ALD110814/ALD110914
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®
MATCHED PAIR MOSFET ARRAY
V_GS(th)= +1.4V
GENERAL DESCRIPTION
ALD110814/ALD110914 are monolithic quad/dual N-Channel MOSFETs
matched at the factory using ALD’s proven EPAD® CMOS technology.
These devices are intended for low voltage, small signal applications.
The ALD110814/ALD110914 MOSFETs are designed and built with ex-
ceptional device electrical characteristics matching. Since these devices
are on the same monolithic chip, they also exhibit excellent tempco track-
ing characteristics. Each device is versatile as a circuit element and is a
useful design component for a broad range of analog applications. They
are basic building blocks for current sources, differential amplifier input
stages, transmission gates, and multiplexer applications. For most appli-
cations, connect V- and N/C pins to the most negative voltage potential in
the system and V+ pin to the most positive voltage potential (or left open
unused). All other pins must have voltages within these voltage limits.
The ALD110814/ALD110914 devices are built for minimum offset voltage
and differential thermal response, and they are designed for switching
and amplifying applications in +1.5V to +10V systems where low input
bias current, low input capacitance and fast switching speed are desired.
Since these are MOSFET devices, they feature very large (almost infinite)
current gain in a low frequency, or near DC, operating environment.
The ALD110814/ALD110914 are suitable for use in precision applications
which require very high current gain, beta, such as current mirrors and
current sources. The high input impedance and the high DC current gain
of the Field Effect Transistors result in extremely low current loss through
the control gate. The DC current gain is limited by the gate input leakage
current, which is specified at 30pA at room temperature. For example, DC
beta of the device at a drain current of 3mA and input leakage current of
30pA at 25°C is = 3mA/30pA = 100,000,000.
FEATURES
• Enhancement-mode (normally off)
• Standard Gate Threshold Voltages: +1.4V
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Parallel connection of MOSFETs to increase drain currents
• Low input capacitance
• V_GS(th) match to 10mV
• High input impedance — 10¹²â„¦ typical
• Positive, zero, and negative V_GS(th) temperature coefficient
• DC current gain >10⁸
• Low input and output leakage currents
ORDERING INFORMATION
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
16-Pin
Plastic Dip
Package
16-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
8Pin
SOIC
Package
ALD110814PC ALD110814SC ALD110914PA ALD110914SA
APPLICATIONS
• Precision current mirrors
• Precision current sources
• Voltage choppers
• Differential amplifier input stages
• Discrete voltage comparators
• Voltage bias circuits
• Sample and Hold circuits
• Analog inverters
• Level shifters
• Source followers and buffers
• Current multipliers
• Discrete analog multiplexers/matrices
• Discrete analog switches
PIN CONFIGURATION
ALD110814
V^-
N/C* 1
G_N1
D_N1
S₁₂
V^-
D_N4
G_N4
N/C*
2
M1
3
4
5 V^-
6
M4
7
8 _V-
V^-
16
15
M2
14
V⁺ 13
12
M3
11
10
V^{- 9}
N/C*
G_N2
D_N2
V⁺
S₃₄
D_N3
G_N3
N/C*
PC, SC PACKAGES
ALD110914
V-
N/C* 1
V-
8 N/C*
G_N1 2
D_N1 3
S₁₂ 4
M1 M2
V-
7 G_N2
6 DN2
5 V-
PA, SA PACKAGES
*N/C pins are internally connected.
Connect to V- to reduce noise
* Contact factory for industrial or military temp. ranges or user-specified threshold voltage values.
Rev 1.0-0506 ©2 005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: [phone] Fax: [phone]
www.aldinc.com