ALD110808_12 Datasheet, PDF (1/11 Pages) Advanced Linear Devices – QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY

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LINEAR
DEVICES, INC.
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ALD110808/ALD110808A/ALD110908/ALD110908A
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®
PRECISION MATCHED PAIR MOSFET ARRAY
VGS(th)= +0.80V
GENERAL DESCRIPTION
ALD110808A/ALD110808/ALD110908A/ALD110908 are high precision
monolithic quad/dual enhancement mode N-Channel MOSFETs matched
at the factory using ALD’s proven EPAD® CMOS technology. These de-
vices are intended for low voltage, small signal applications.
These MOSFET devices are built on the same monolithic chip, so they
exhibit excellent temperature tracking characteristics. They are versatile
as circuit elements and are useful design component for a broad range of
analog applications. They are basic building blocks for current sources,
differential amplifier input stages, transmission gates, and multiplexer
applications. For most applications, connect the V- and IC pins to the most
negative voltage in the system and the V+ pin to the most positive voltage.
All other pins must have voltages within these voltage limits at all times.
APPLICATIONS
• Precision current mirrors
• Precision current sources
• Voltage choppers
• Differential amplifier input stage
• Voltage comparator
• Voltage bias circuits
• Sample and Hold
• Analog inverter
• Level shifters
• Source followers and buffers
• Current multipliers
• Analog switches / multiplexers
ALD110808/ALD110908 devices are built for minimum offset voltage and
differential thermal response, and they are suited for switching and ampli-
fying applications in +1.0V to +10V (+/- 5 V) systems where low input bias
current, low input capacitance and fast switching speed are desired. As
these are MOSFET devices, they feature very large (almost infinite) cur-
rent gain in a low frequency, or near DC, operating environment.
These devices are suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result from extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 30pA at room temperature. For example, DC beta of the
device at a drain current of 3mA and input leakage current of 30pA at
25°C is = 3mA/30pA = 100,000,000.
FEATURES
• Enhancement-mode (normally off)
• Standard Gate Threshold Voltages: +0.80V
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
• V_GS(th) match to 2mV and 10mV
• High input impedance — 10¹²â„¦ typical
• Positive, zero, and negative V_GS(th) temperature coefficient
• DC current gain >10⁸
• Low input and output leakage currents
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
16-Pin
SOIC
Package
16-Pin
Plastic Dip
Package
8-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
ALD110808ASCL ALD110808APCL ALD110908ASAL ALD110908APAL
ALD110808SCL ALD110808PCL ALD110908SAL ALD110908PAL
* Contact factory for industrial temp. range or user-specified threshold voltage values.
PIN CONFIGURATION
ALD110808
V^-
IC* 1
G_N1 2
D_N1 3
S₁₂ 4
V^-
5
M1
V^-
D_N4 6
M4
G_N4 7
IC* 8 _V-
V^-
16 IC*
M2
V⁺
15 G_N2
14 D_N2
13 V⁺
12 S₃₄
M3
11 D_N3
10 G_N3
V^{- 9 IC*}
SCL, PCL PACKAGES
ALD110908
V-
IC* 1
V-
8 _IC*
G_N1 2
D_N1 3
S₁₂ 4
M1 M2
V-
7 G_N2
6 D_N2
5 V-
SAL, PAL PACKAGES
*IC pins are internally connected.
Connect to V-
Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: [phone] Fax: [phone]
www.aldinc.com