AP3440ABN111 Datasheet, PDF (5/17 Pages) Asahi Kasei Microsystems – High-Accurate Step-Down DC-DC Converter with 4.5A MOSFET

[AP3440]
7. Absolute Maximum Ratings
Parameter
Symbol
Min.
Max.
Voltage between PGND1~4 and VIN,
PVIN1~4 or SW1~6
Vterm1
-0.3
+6.0
Voltage between SGND and FSIN, EN,
SS, CC, TEST1~3, PG, FSO, VO1 or VO2
Vterm2
-0.3
+6.0
Voltage between SGND and PGND1~4
Vterm3
-0.3
+0.3
Voltage between VIN and PVIN1~4
Vterm4
-0.3
+0.3
Storage Ambient Temperature Range
Tstg
-40
150
Junction Temperature
Tj
-40
150
Power Dissipation (Note 1) Ta=25°C
Pd parallel
11.767
Note 1. Junction to Ambient Thermal Resistance
θ_JA = 39.7°C/W
Junction to Case Thermal Resistance
θ_JC = 0.93°C /W
Parallel Thermal Resistance (θ_JA: 25%, θ_JC: 75%)
θ_(JA+JC) = 10.63°C /W
Ambient temperature of 25°C using JEDEC 4L board. (114.3mm × 76.2mm)
14
12
25℃ 11.767W
10
8
6
4
125℃ 2.353W
2
0
-50 -25
0
25
50
75 100 125 150
OPERATING AMBIENT TEMPERATURE Ta [℃]
Unit
V
V
V
V
°C
°C
W
Figure 4. Power Dissipation
WARNING: Operation at or beyond these limits may result in permanent damage to the device.
Normal operation is not guaranteed at these extremes.
016008997-E-00
-5-
2016/10