AM14N65P Datasheet, PDF (4/5 Pages) Analog Power – N-Channel 650-V (D-S) MOSFET

Analog Power
AM14N65P
10
VDS = 100V
ID = 2A
8
6
4
2
Typical Electrical Characteristics
2.5
2
1.5
1
0
0
1000
100
10
1
0.1
0.01
0.1
20
40
60
Qg - Total Gate Charge (nC)
7. Gate Charge
10 uS
100 uS
1 mS
10 mS
100 mS
1 SEC
10 SEC
100 SEC
1
DC
Idm limit
Limited by
RDS
1
10 100 1000 10000
VDS Drain to Source Voltage (V)
9. Safe Operating Area
0.5
-50 -25 0 25 50 75 100 125 150
TJ -JunctionTemperature(°C)
8. Normalized On-Resistance Vs
Junction Temperature
900
800
700
600
500
400
300
200
100
0
0.001 0.01 0.1
1
10 100 1000
t1 TIME (SEC)
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.001
0.0001
Single Pulse
0.001
R_θJA(t) = r(t) + R_θJA
R_θJA = 62.5 °C /W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁ / t₂
0.01
0.1
1
10
100
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
1000
© Preliminary
4
Publication Order Number:
DS_AM14N65P_1A