AM8N80P Datasheet, PDF (1/5 Pages) Analog Power – N-Channel 800-V (D-S) MOSFET

Analog Power
N-Channel 800-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• Power Supplies
• Motor Drives
• Consumer Electronics
AM8N80P
VDS (V)
800
PRODUCT SUMMARY
r_DS(on) (Ω)
1.5 @ V_GS = 10V
ID (A)
8^a
DRAIN
connected
to TAB
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
V_DS
800
Gate-Source Voltage
Continuous Drain Current ^a
V_GS
±20
T_C=25°C
I_D
8
Pulsed Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
Power Dissipation ^a
I_DM
50
T_C=25°C
I_S
8
T_C=25°C
P_D
300
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient ^C
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R_θJA
R_θJC
Maximum
62.5
0.5
Units
°C/W
Notes
a. Package Limited
b. Pulse width limited by maximum junction temperature
c. Surface Mounted on 1” x 1” FR4 Board.
© Preliminary
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Publication Order Number: DS_AM8N80P_1A