AM8N60P Datasheet, PDF (1/5 Pages) Analog Power – N-Channel 600-V (D-S) MOSFET

Analog Power
N-Channel 600-V (D-S) MOSFET
Key Features:
• Low r_DS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• Off-line Power Supplies
• Electronic Ballasts
• High Power LED Lighting
AM8N60P
PRODUCT SUMMARY
VDS (V)
r_DS(on) (Ω)
600
1 @ V_GS = 10V
ID(A)
8^a
DRAIN
connected
to TAB
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
V_DS
600
Gate-Source Voltage
V_GS
±20
Continuous Drain Current
Pulsed Drain Current ^a
T_C=25°C
I_D
8
I_DM
50
Continuous Source Current (Diode Conduction)
T_C=25°C
I_S
8
Power Dissipation
T_C=25°C
P_D
150
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R_θJA
R_θJC
Maximum
62.5
1
Units
°C/W
Notes
a. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM8N60P_1A