AM12N50P Datasheet, PDF (1/5 Pages) Analog Power – N-Channel 500-V (D-S) MOSFET

Analog Power
N-Channel 500-V (D-S) MOSFET
Key Features:
• Low r_DS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• Off-line Power Supplies
• Electronic Ballasts
• High Power LED Lighting
AM12N50P
PRODUCT SUMMARY
VDS (V)
r_DS(on) (mΩ)
500
520 @ V_GS = 10V
ID (A)
12^a
DRAIN
connected
to TAB
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
V_DS
500
Gate-Source Voltage
Continuous Drain Current ^a
Pulsed Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
V_GS
±20
T_C=25°C
I_D
12
I_DM
50
I_S
12
Power Dissipation
T_C=25°C
P_D
150
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient ^a
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R_θJA
R_θJC
Maximum
62.5
1
Units
°C/W
Notes
a. Calculated continuous current based on maximum allowable junction temperature.
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM12N50P_1A