E2560 Datasheet, PDF (3/6 Pages) Agere Systems – E2560/E2580-Type 10 Gbits/s EML Modules

Advance Data Sheet
January 1999
E2560/E2580-Type 10 Gbits/s EML Modules
Target Specifications
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are
absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in
excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for
extended periods can adversely affect device reliability.
Table 3. Absolute Maximum Ratings
Parameter
Conditions
Limit
Unit
Laser Diode Reverse Voltage
CW
2
V
Laser Diode Forward Current
CW
150
mA
Optical Output Power
CW
10
mW
Modulator Reverse Voltage
—
5
V
Modulator Forward Voltage
—
1
V
Monitor Diode Reverse Voltage
—
10
V
Monitor Diode Forward Voltage
—
1
V
Storage Temperature
—
–40 to +85
°C
Operating Temperature
—
–10 to +70
°C
Characteristics
Table 4. Optical and Electrical Specifications (Chip operating temp. = 15 °C to 35 °C, except where noted.)
Parameter
Threshold Current (BOL)
Forward Voltage
Operating Current
Threshold Power
Symbol
Ith
VF
Iop
Pth
Fiber Output Power (Peak)
Ppk
Peak Wavelength
(Wavelength can be specified
to the ITU wavelength
channels.)
Side-mode Suppression Ratio
λ0
SMSR
Dispersion Penalty
DP
BER = 10^–10
Conditions
—
If = Iop @ Top
—
If – Ith
Vm = Iop
Vm = 0 V
If = Iop
Vm = 0 V
Tlaser chip = Top
If = Iop
Vm = 0 V
If = Iop, Top
10 Gbits/s*
Vlow = –1.5 to –3.0 V,
Vhigh = 0 V to –1 V
If = lop @ Top
Min
5
—
50
—
1
1530
30
—
Max
35
2.2
100
80
—
1563
—
2.0
Unit
mA
V
mA
µW
dBm
nm
dB
dB
* Over 720 ps/nm (40 km version), 1440 ps/nm (80 km version).
Lucent Technologies Inc.
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