UT9Q512K32E Datasheet, PDF (6/20 Pages) Aeroflex Circuit Technology – UT9Q512K32E 16 Megabit RadTolerant SRAM MCM

AC CHARACTERISTICS READ CYCLE (Pre/Post-Radiation)*
-40C to +105C (V_DD = 5.0V + 10% for (W) screening)
SYMBOL
t_AVAV1
t_AVQV
t_AXQX2
t_GLQX2
t_GLQV
t_GHQZ2
t_ETQX2,3
t_ETQV3
t_EFQZ1,2,4
Read cycle time
PARAMETER
Read access time
Output hold time
G-controlled Output Enable time
G-controlled Output Enable time (Read Cycle 3)
G-controlled output three-state time
En-controlled Output Enable time
En-controlled access time
En-controlled output three-state time
MIN
25
3
0
3
Notes: * Post-radiation performance guaranteed at 25C per MIL-STD-883 Method 1019.
1. Functional test.
2. Three-state is defined as a 500mV change from steady-state output voltage.
3. The ET (enable true) notation refers to the falling edge of En. SEU immunity does not affect the read parameters.
4. The EF (enable false) notation refers to the rising edge of En. SEU immunity does not affect the read parameters.
MAX
25
10
10
25
10
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
High Z to Active Levels
Active to High Z Levels
V_LOAD + 500mV
V_LOAD
{
{
V_LOAD - 500mV
Figure 3. 5-Volt SRAM Loading
V_H - 500mV
}
}
V_L + 500mV
6