RHD5950 Datasheet, PDF (5/8 Pages) Aeroflex Circuit Technology – RadHard-by-Design RHD5950 16-Channel Multiplexed 14-Bit Analog-to-Digital Converter

ELECTRICAL PERFORMANCE CHARACTERISTICS
(TC = -55°C TO +125°C, +AVCC = +5.0 V, +DVCC = +5.0 V, +DRVP = +5.0 V, unless stated otherwise)
Parameter
Symbol
Conditions
Min
Max
Integral Nonlinearity 1/
INL
PREF-NREF = 4.0 V
-48
Differential Nonlinearity 1/
DNL PREF-NREF = 4.0 V
-8.2
Offset Error 1/
OE
PREF-NREF = 4.0 V
-1
Gain Error 1/
AE
PREF-NREF = 4.0 V
-2
Clock Frequency 1/
fC
PREF-NREF = 5.0 V
-
Maximum Sampling Rate 2/
fSAMPLE
(MAX)
fC = 1 MHZ, 20 clocks per conversion
-
High Input Leakage Current
(AIN00-AIN15) 1/ 3/
IINLK_HI
Input under test = AvCC,
VEN = DVCC
+25°C
-5
+125°C -50
Low Input Leakage Current
(AIN00-AIN15) 1/ 3/
IINLK_LO
Input under test = AGND,
VEN = DVCC
+25°C
-5
+125°C -50
Digital High Level Input Voltage
DVRP = 5.0 V 1/
3.5
EN_H, STCNV_H, OE_H, CLK,
VIH
(AD00-AD03)
DVRP = 3.3 V 2/
2.31
Digital Low Level Input Voltage
DVRP = 5.0 V 1/
-
EN_H, STCNV_H, OE_H, CLK,
VIL
(AD00-AD03)
DVRP = 3.3 V 2/
-
Digital High Level Input Current
EN_H, STCNV_H, OE_H, CLK,
(AD00-AD03) 1/ 3/
IIH
Digital input under test = 5.0 V
All other digital inputs = DGND
+25°C
-5
+125°C -50
Digital Low Level Input Current
EN_H, STCNV_H, OE_H, CLK,
(AD00-AD03) 1/ 3/
IIL
All digital inputs = DGND
+25°C
-5
+125°C -50
Digital High Level Output Voltage
(B00-B13) 1/
DVRP = 5.0 V, VEN = DvCC, IOH = -4.0 mA
4.2
VOH
DVRP = 3.3 V, VEN = DvCC, IOH = -4.0 mA
2.7
Digital Low Level Output Voltage
(B00-B13) 1/
DVRP = 5.0 V,
VEN = DvCC,
IOL = +4.0 mA
VOL
DVRP = 3.3 V,
VEN = DvCC,
IOL = +4.0 mA
-55°C,
+25°C
-
+125°C
-
-55°C,
+25°C
-
+125°C
-
Digital High Level Output Current
IOH
DVRP = 5.0 V, VEN = VIH
-
(B00-B13) 1/
(SOURCE) _{DVRP = 3.3 V, VEN = VIH}
-
Digital Low Level Output Current
IOL
DVRP = 5.0 V, VEN = VIH
-
(B00-B13) 1/
(SINK)
DVRP = 3.3 V, VEN = VIH
-
High Output Leakage Current
(B00-B13) 1/ 3/
IOUTLK_HI VOE = DGND
+25°C
-5
+125°C -50
Low Output Leakage Current
(B00-B13) 1/ 3/
IOUTLK_LO VOE = DGND
+25°C
-5
+125°C -50
Notes:
1/ Specification derated to reflect Total Dose exposure to 100krad(Si) @ +25°C.
2/ Not tested. Shall be guaranteed by design, characterization, or correlation to other test parameters.
3/ These parameters for Tc = -55°C are guaranteed by design, characterization, or correlation to other test parameters.
48
8.2
1
2
1
50
5
50
5
50
-
-
1.5
0.99
5
50
5
50
-
-
0.6
0.8
0.6
0.8
-4.0
-4.0
4.0
4.0
5
50
5
50
Units
LSBs
LSBs
%FSR
%FSR
MHz
kSPS
nA
V
nA
V
V
mA
nA
SCD5950 Rev G 1/14/16
5
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