RHD5900 Datasheet, PDF (1/6 Pages) Aeroflex Circuit Technology – RadHard-by-Design RHD5900 Quad Operational Amplifier

Standard Products
RadHard-by-Design
RHD5900 Quad Operational Amplifier
www.aeroflex.com/RHDseries
April 8, 2013
FEATURES
 Single power supply operation (3.3V to 5.0V) or dual power supply operation (±1.65 to ±2.5V)
 Radiation performance
- Total dose:
>1Mrad(Si); Dose rate = 50 - 300 rads(Si)/s
- ELDRS Immune
- SEL Immune
- Neutron Displacement Damage
>100 MeV-cm²/mg
>10¹⁴ neutrons/cm²
 Rail-to-Rail input and output range
 Short Circuit Tolerant
 Full military temperature range
 Designed for aerospace and high reliability space applications
 Packaging – Hermetic ceramic SOIC
- 16-pin, .411"L x .293"W x .105"Ht
- Weight - 0.8 grams max
 Aeroflex Plainview’s Radiation Hardness Assurance Plan is DLA Certified to MIL-PRF-38534, Appendix G.
GENERAL DESCRIPTION
Aeroflex’s RHD5900 is a radiation hardened, single supply, quad operational amplifier in a 16-pin SOIC
package. The RHD5900 design uses specific circuit topology and layout methods to mitigate total ionizing
dose effects and single event latchup. These characteristics make the RHD5900 especially suited for the
harsh environment encountered in Deep Space missions. It is guaranteed operational from -55°C to
+125°C. Available screened in accordance with MIL-PRF-38534 Class K, the RHD5900 is ideal for
demanding military and space applications.
ORGANIZATION AND APPLICATION
The RHD5900 amplifiers are capable of rail-to-rail input and outputs. Performance characteristics listed are
for general purpose operational 5V CMOS amplifier applications. The amplifiers will drive substantial
resistive or capacitive loads and are unity gain stable under normal conditions. Resistive loads in the low
kohm range can be handled without gain derating and capacitive loads of several nF can be tolerated.
CMOS device drive has a negative temperature coefficient and the devices are therefore inherently tolerant
to momentary shorts, although on chip thermal shutdown is not provided. All inputs and outputs are diode
protected.
The devices will not latch with SEU events to above 100 MeV-cm²/mg. Total dose degradation is minimal
to above 1Mrad(Si). Displacement damage environments to neutron fluence equivalents in the mid 10¹⁴
neutrons per cm² range are readily tolerated. There is no sensitivity to low-dose rate (ELDRS) effects. SEU
effects are application dependent.
SCD5900 Rev G