A5F_600 Datasheet, PDF (1/5 Pages) AEGIS SEMICONDUTORES LTDA – A5F:600.XXHY

AEGIS
SEMICONDUTORES LTDA.
A5F:600.XXHY
VOLTAGE RATINGS
V_RRM , VR – (V)
Part Number rep. peak reverse voltage
Max. V_RSM , V_R – (V) Max. non-
rep. peak reverse voltage
T_J = 0 to 125ºC
A5F:600.02HY
200
T_J = -40 to 0ºC
200
T_J = 25 to 125ºC
300
A5F:600.04HY
400
400
500
A5F:600.06HY
600
600
700
A5F:600.08HY
A5F:600.10HY
800
1000
800
1000
900
1100
A5F:600.12HY
A5F:600.14HY
A5F:600.16HY
1200
1400
1600
1200
1330
1520
1300
1500
1700
A5F:600.18HY
A5F:600.20HY
1800
2000
1710
1900
1900
2100
MAXIMUM ALLOWABLE RATINGS
PARAMETER
T_J Junction Temperature
T_stg Storage Temperature
I_F(AV)
Max. Av. current
@ Max. T_C
I_F(RMS) Nom. RMS current
VALUE
-40 to 125
-40 to 150
600
70
1015
12000
I_FSM Max. Peak non-rep. surge
current
12500
14000
15000
UNITS
O_C
O_C
A
O_C
A
A
180^O half sine wave
NOTES
-
-
50 Hz half cycle sine wave
60 Hz half cycle sine wave
-
Initial T_J = 200^OC, rated V_RRM
applied after surge.
50 Hz half cycle sine wave
60 Hz half cycle sine wave
Initial T_J = 200^OC, no voltage
applied after surge.
710
I²t Max. I²t capability
650
1000
920
I²t^1/2 Max. I²t^1/2 capability
di/dt Max. Non-repetitive rate-of-
rise current
10000
800
P_GM Max. Peak gate power
16
P_G(AV) Max. Av. gate power
3
+I_GM Max. Peak gate current
-V_GM Max. Peak negative gate
voltage
F Mounting Force
4
15
15150(3400) +- 10%
kA²s
kA²s^1/2
A/ms
W
W
A
V
N(Lbf)
t = 10ms
t = 8.3 ms
Initial T_J = 200^OC, rated V_RRM
applied after surge.
t = 10ms
Initial T_J = 200^OC, no voltage
t = 8.3 ms
applied after surge.
Initial T_J = 200^OC, no voltage applied after surge.
I²t for time t_x = I²t^1/2 * t_x1/2. (0.1 < tx < 10ms).
T_J = 125^OC, V_D = V_DRM, I_TM = 1600A. Gate pulse: 20V, 20 W,
apriximately 40% of non-repetitive value.
tp < 5 ms
-
tp < 5 ms
-
-