SD036-70-62-531 Datasheet, PDF (1/1 Pages) Advanced Photonix, Inc. – Small Area Silicon Avalanche Photodiode

Small Area Silicon Avalanche Photodiode
SD 036-70-62-531
PACKAGE DIMENSIONS INCH / mm
TO-5 PACKAGE
CHIP DIMENSIONS INCH [mm]
FEATURES
• Low noise
• Small size
• High Speed
• Low cost
DESCRIPTION
The SD 036-70-62-531 is a 0.9 mm diameter small
area silicon avalanche photodiode (APD) that
provides high gain and low noise, packaged in a
hermetic TO-5 metal can with a flat window.
APPLICATIONS
• Military
• Industrial
• Medical
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SPECTRAL RESPONSE
SYMBOL
V_BR
PARAMETER
Reverse Voltage
MIN MAX UNITS
80
70
130 280 V
60
T_STG
Storage Temperature
-40 +85
°C
50
40
T_O
Operating Temperature
-40 +55
°C
30
T_S
Soldering Temperature*
+240 ^°C
20
10
* 1/16 inch from case for 3 seconds max.
0
80
70
60
50
40
30
R
QE
20
10
0
Wavelength (nm)
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C and gain of 100 at 820nm UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP MAX
UNITS
I_D
C_J
I_N
lrange
R
Vop
t_r
Dark Current
Junction Capacitance
Noise Current Spectral Density
Spectral Application Range
Responsivity
Operating voltage
Response Time**
f = 1 MHz
f = 100 kHz
Spot Scan
l= 660nm, V_R = 0 V
l= 830nm, V_R = 0 V
RL = 50 Ω, l= 675nm
7
30
nA
10
0.12
pF
pA/√Hz
400
1100
nm
30
A/W
47
130
280
V
2
nS
**Response time of 10% to 90% is specified at 820nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
s_Eub_Lje_Ect _Cto c_Th_Rang_Oe w_-Oitho_Put_Tno_It_Cice_A. _{L CHARACTERISTICS RATING (TA)= 23°C and Gain = 100 at 830nm UNLESS OTHERWISE}
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP MAX
UNITS
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone [phone] • Fax [phone] • www.advancedphotonix.com