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SD012-70-62-541 Datasheet, PDF (1/1 Pages) Advanced Photonix, Inc. – Small Area Silicon Avalanche Photodiode
Small Area Silicon Avalanche Photodiode
SD 012-70-62-541
PACKAGPEADCIKMAEGNESIDOINMSEINNSCIOHN/ SmImNCH / mm
TO-5 PACKAGE
CCHHIPIPDDIMIMEENNSSIOIONNSSININCCHH[m[mmm] ]
TO-46 PACKAGE
FEATURES
• Low noise
• Small size
• High Speed
• Low cost
DESCRIPTION
The SD 012-70-62-541 is a 0.3 mm diameter
small area silicon avalanche photodiode (APD)
that provides high gain and low noise, packaged
in a hermetic TO-46 metal can with a flat window.
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
VBR
PARAMETER
Reverse Voltage
MIN MAX UNITS
80
70
130 280 V
60
TSTG
Storage Temperature
-40 +85
°C
50
40
TO
Operating Temperature
-40 +55
°C
30
TS
Soldering Temperature*
+240 °C
20
10
* 1/16 inch from case for 3 seconds max.
0
APPLICATIONS
• Military
• Industrial
• Medical
SPESCPTERCATLRRAELSRPEOSNPSOENSME= 100
80
70
60
50
40
30
R
QE
20
10
0
Wavelength (nm)
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C and gain of 100 at 820nm UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP MAX
UNITS
ID
CJ
IN
lrange
R
Vop
tr
Dark Current
Junction Capacitance
Noise Current Spectral Density
Spectral Application Range
Responsivity
Operating voltage
Response Time**
f = 1 MHz
f = 100 kHz
Spot Scan
l= 660nm, VR = 0 V
l= 830nm, VR = 0 V
RL = 50 Ω, l= 675nm
2
10
nA
2.5
0.12
pF
pA/√Hz
400
1100
nm
30
A/W
47
130
280
V
0 .7 1
nS
**Response time of 10% to 90% is specified at 820nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
sEubLjeEct Cto cThRangOe w-OithoPutTnoItCiceA. L CHARACTERISTICS RATING (TA)= 23°C and Gain = 100 at 830nm UNLESS OTHERWISE
AdSvaYnMceBdOPhLotonix InCc.H12A4R0 AAvCenTidEaRAIcSaTsoIC, Camarillo CA 930T1E2S• TPhConOeN(8D05IT) 9IO87N-0S146 • Fax (805)M48IN4-9935 • wTwYwP.advancMedAphXotonix.coUmNITS
REV 8/22/06