SD012-11-41-211 Datasheet, PDF (1/1 Pages) Advanced Photonix, Inc. – InGaAs Photodetectors

InGaAs Photodetectors
SD 012-11-41-211
PACKAGE DIMENSIONS INCH [mm]
0.210 [5.33]
0.165 [4.19]
0.184 [4.67]
88°
0.059 [1.50]
3X 0.019 [0.48]
CHIP
0.145 [3.69]
0.50 [12.7]
CHIP DIMENSIONS INCH [mm]
0.016 [0.40]
0.016 [0.40]
.0079 [.200] ACTIVE AREA
1 ANODE
2 CASE GROUND
3 CATHODE
SCHEMATIC
TO-46 PACKAGE
FEATURES
• Low noise
• Low dark current
• High response
DESCRIPTION
The SD 012-11-41-211 is a high sensitivity low noise
characteristics InGaAs photodiode packaged in a
leaded hermetic TO-46 metal package.
APPLICATIONS
• Communication
• Industrial
• Medical
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL PARAMETER
MIN MAX UNITS
V_BR
Reverse Voltage
75
V
T_STG
Storage Temperature
-55 +100 °C
T_O
Operating Temperature -40 +85 ^°C
T_S
Soldering Temperature*
+260 ^°C
* 1/16 inch from case for 3 seconds max.
SPECTRAL RESPONSE
1.2
1
0.8
0.6
0.4
0.2
0
800
900 1000 1100 1200 1300 1400 1500 1600 1700
Wavelength (nM)
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
I_D
R_SH
C_J
lrange
R
V_BR
NEP
t_r
CHARACTERISTIC
Dark Current
Shunt Resistance
Junction Capacitance
Spectral Application Range
Responsivity
Breakdown Voltage
Noise Equivalent Power
Response Time**
TEST CONDITIONS
V_R = 5V
V_R = 10 mV
V_R = 5V, f = 1 MHz
Spot Scan
l= 1310nm, V_R = 5V
I = 1μA
V_R = 5V @ l=1310nm
RL = 50 Ω,V_R = 5V
MIN
50
800
0.83
TYP
1
150
6
0.92
18
1.79X10^-14
MAX
5.0
9
1700
1.15
UNITS
nA
MW
pF
nm
A/W
V
W/ √ _Hz
nS
**Response time of 10% to 90% is specified at 1310nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone [phone] • Fax [phone] • www.advancedphotonix.com
REV 3/30/06