PDI-E837 Datasheet, PDF (1/1 Pages) Advanced Photonix, Inc. – GaAlAs High power IR LED Emitters (660nm/880nm)

GaAlAs High power IR LED Emitters
(660nm/880nm) PDI-E837
.205 [5.21]
RED L.E.D.
PACKAGE DIMENSIONS INCH [mm]
WIRE BOND
I.R. L.E.D.
.055 [1.40]
.025 [0.64]
.225 [5.71]
CLEAR
ENCAPSULATE
METALIZED CERAMIC
SUBSTRATE
3X SOLDER PAD
CONTACT C
CONTACT B
CONTACT A
Metalized Ceramic Package
FEATURES
• Low Cost
• 660 nm +/- 3nm
• 3 drive line
DESCRIPTION
The PDI-E837 is a three drive line dual emitter
oximeter component. The 660 and 880nm GaAlAs
infrared emitters are mounted in a glob toped low
cost ceramic SMT package. The LEDs have a
common anode.
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL PARAMETER
MIN MAX ^UNITS
P_d Power Dissipation
250 mW
I_f
Continuous Forward Current
30
mA
I_p
Peak Forward Current
200 mA
V_r
Reverse Voltage
4
V
T_STG
T_O
T_S
Storage Temperature
Operating Temperature
Soldering Temperature*
-40 +80
°C
-40 +80
°C
+240 ^°C
* 1/16 inch from case for 3 seconds max.
APPLICATIONS
• Oximeter Probes
• Finger Clamps
• Reusable probes
SCHEMATIC
B
660 nm
LED
A
880 nm
LED
C
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
660 nm
MIN TYP MAX
P_o
Radiant Flux
I_f = 20 mA
Iv
Luminous Intensity
I_f= 20 mA
V_f
Forward Voltage
I_f = 20 mA
V_r
Reverse Breakdown Voltage I_f = 10 μA
1.8 2.4
20 57
1.8 2.4
5
l_p
Peak Wavelength
I_f = 20 mA
658 661 664
Δl
Spectral Halfwidth
I_f = 20 mA
21
t_r
Rise Time
I_f = 20 mA
0.1
t_f
Fall Time
I_f = 20 mA
0.04
880 nm
MIN TYP MAX
1.8 2.0
1.3 1.7
5
870 880 890
50
0.8
0.8
UNITS
mW
mcd
V
V
nm
nm
uS
uS
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone [phone] • Fax [phone] • www.advancedphotonix.com