PDI-E832 Datasheet, PDF (1/1 Pages) Advanced Photonix, Inc. – GaAlAs High power IR LED Emitters (660nm/905nm)

GaAlAs High power IR LED Emitters
(660nm/905nm) PDI-E832
.063 [1.60]
.167 [4.24]
CL
.104 [2.64]
CL
.060 [1.52]
CL
.250 [6.35]
PACKAGE DIMENSIONS INCH [mm]
RED L.E.D. CHIP
I.R. L.E.D. CHIP
.055 [1.40]
.025 [0.64]
WIRE BONDS
ENCAPSOLATE
METALIZED
CERAMIC
CONTACT B
CONTACT A
Metalized Ceramic Package
FEATURES
• Low Cost
• 660 nm +/- 3nm
• 2 drive line
DESCRIPTION
The PDI-E832 is a two drive line dual emitter
oximeter component. The 660 and 905 nm GaAlAs
infrared emitters are mounted in a glob toped. The
LEDs are bias separately by alternating polarity on
the bias pins.
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL PARAMETER
MIN MAX ^UNITS
P_d
I_f
I_p
V_r
T_STG
T_O
T_S
Power Dissipation
Continuous Forward Current
Peak Forward Current
Reverse Voltage
Storage Temperature
-40
Operating Temperature
-40
Soldering Temperature*
250
30
200
4
+80
+80
+240
mW
mA
mA
V
°C
°C
°C
* For 3 seconds max using a heat sink
APPLICATIONS
• Oximeter Probes
• Finger Clamps
• Reusable probes
SCHEMATIC
660 nm
LED
A
905 nm
LED
B
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
660 nm
MIN TYP MAX
P_o
Radiant Flux
Iv
Luminous Intensity
V_f
Forward Voltage
l_p
Peak Wavelength
I_f = 20 mA
I_f= 20 mA
I_f = 20 mA
I_f = 20 mA
1.8 2.4
20 30
1.8 2.4
658 661 664
Δl
Spectral Halfwidth
I_f = 20 mA
25
t_r
Rise Time
I_f = 20 mA
0.1
t_f
Fall Time
I_f = 20 mA
0.04
905 nm
MIN TYP MAX
1.2 1.8
1.2 1.5
895 905 915
50
1.4
0.7
UNITS
mW
mcd
V
nm
nm
uS
uS
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone [phone] • Fax [phone] • www.advancedphotonix.com