PDI-E808-A Datasheet, PDF (1/1 Pages) Advanced Photonix, Inc. – GaAlAs High power IR LED Emitters

GaAlAs High power IR LED Emitters
PDI-E808-A
PAC_PAK_CA_KG_AGE_ED_DI_IM_ME_ENN_SS_IOIO_NN_S S_INCIN_HC_[mH_m[_]mm]
BLUE CLEAR
PLASTIC
Ø0.118 [3.00]
BEAM
ANGLE
75°
0.177 [4.50]
0.98 [25.0]
0.059 [1.5]
MAX
0.039 [0.99]
1.04 [26.5]
0.126 [3.20]
0.020 [0.51] SQ
CL
0.100 [2.54]
CL
CATHODE
ANODE
T 1 ¾ PACKAGE
T 1¾ PACKAGE
FEATURES
• High output power
• High reliability
• Medium emission angle
DESCRIPTION
The PDI-E808-A is a high power GaAlAs infrared
emitter, packaged in a low cost T 1¾ plastic package.
APPLICATIONS
• Photoelectric switches
• Infrared sources
• Automatic controls
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL PARAMETER
MIN MAX ^UNITS
P_d
I_f
I_p
V_r
T_STG
T_O
T_S
Power Dissipation
Continuous Forward Current
Peak Forward Current
Reverse Voltage
Storage Temperature
-65
Operating Temperature
-65
Soldering Temperature*
200
100
1
5
+125
+125
+240
mW
mA
A
V
°C
°C
°C
* 1/16 inch from case for 3 seconds max.
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
P_o
Radiant Intensity
V_f
Forward Voltage
I_f = 100 mA
I_f = 100 mA
V_r
Reverse Breakdown Voltage I_f = 100 μA
l_p
Peak Wavelength
I_f = 50 mA
Δl
Spectral Halfwidth
I_f = 50 mA
C_t
Terminal Capacitance
V_r = 0V, f = 1MHz
I_R
Reverse Current
V_r = 4V
t_r
Rise Time
I_f = 20 mA
t_f
Fall Time
I_f = 20 mA
12
1.5
5
30
880
70
20
10
1.5
0.8
MAX
30
2.0
UNITS
mW/Sr
V
V
nm
nm
pF
uA
uS
uS
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone [phone] • Fax [phone] • www.advancedphotonix.com
REV 4/21/06