APT25GP90BDQ1 Datasheet, PDF (8/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

45
40
35
30
25
T_J = 175°C
20
15
T_J = 125°C
10
5
T_J = 25°C
T_J = -55°C
0
0
1
2
3
4
V_F, ANODE-TO-CATHODE VOLTAGE (V)
Figure 25. Forward Current vs. Forward Voltage
2000
T_J = 125°C
1800 ^VR ^{= 667V}
1600
30A
1400
1200
1000
15A
800
600
7.5A
400
200
0
0 200 400 600 800 1000 1200
Figure 27. ^-R^de^iFv^/e^dr^ts^, e^CUR^Rec^Ro^Ev^Ne^Try^RC^Ah^Ta^Erg^Oe^Fv^Cs.^HC^Au^Nr^Gre^Ent^(AR^/a^µt^se⁾ of Change
1.2
1.0
t_rr
0.8
I_RRM
Q_rr
t_rr
0.6
0.4
Q_rr
0.2
0.0
0 25 50 75 100 125 150
Figure 29. ^TD^Jy^, n^Ja^Um^Ni^Cc^TP^IOar^Nam^TEe^Mte^Prs^Ev^Rs^A.^TJ^Uu^Rnc^Eti⁽o^°Cn⁾Temperature
80
70
60
50
40
30
20
10
0
1
10
100 200
V_R, REVERSE VOLTAGE (V)
Figure 31. Junction Capacitance vs. Reverse Voltage
APT25GP90BDQ1(G)
400
350
30A
T_J = 125°C
V_R = 667V
300
15A
250
200
7.5A
150
100
50
0
0 200 400 600 800 1000 1200
-di_F /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 26. Reverse Recovery Time vs. Current Rate of Change
25
T_J = 125°C
V_R = 667V
30A
20
15
15A
10
7.5A
5
0
0 200 400 600 800 1000 1200
Figure 28. R^-de^iFve^/dr^ts^,e^CR^Ue^Rc^Ro^Ev^Ner^Ty^RC^Au^Trr^Een^Ot^Fv^Cs.^HC^Au^Nr^Gre^Ent^(AR^/a^µt^se⁾ of Change
35
Duty cycle = 0.5
T_J = 175°C
30
25
20
15
10
5
0
25 50
75 100 125 150 175
Case Temperature (°C)
Figure 30. Maximum Average Forward Current vs. CaseTemperature