APT150GN60JDQ4 Datasheet, PDF (7/9 Pages) Advanced Power Technology – IGBT

TYPICAL PERFORMANCE CURVES
APT150GN60JDQ4
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Characteristic / Test Conditions
APT100GN60LDQ4
UNIT
I_F(AV) _{Maximum Average Forward Current (TC = 103°C, Duty Cycle = 0.5)}
I_F(RMS) _{RMS Forward Current (Square wave, 50% duty)}
100
146
Amps
I_FSM Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3ms)
1000
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
V_F
Forward Voltage
DYNAMIC CHARACTERISTICS
I_F = 150A
I_F = 300A
I_F = 150A, T_J = 125°C
1.83
2.33
1.47
Volts
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
t_rr
Reverse Recovery Time ^I_F ^{= 1A, di}_F^{/dt = -100A/µs, V}_R ^{= 30V, T}_J ^{= 25°C}
-
34
ns
t_rr
Reverse Recovery Time
-
160
Q_rr
I_RRM
Reverse Recovery Charge
Maximum Reverse Recovery Current
I_F = 100A, di_F/dt = -200A/µs
-
290
nC
V_R = 400V, T_C = 25°C
-
5
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
220
ns
I_F = 100A, di_F/dt = -200A/µs
-
1530
nC
V_R = 400V, T_C = 125°C
-
13
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
100
I_F = 100A, di_F/dt = -1000A/µs
-
2890
V_R = 400V, T_C = 125°C
-
44
ns
nC
Amps
0.35
0.30
D = 0.9
0.25
0.7
0.20
0.5
0.15
Note:
0.10
0.3
t1
t2
0.05
0.1
Duty Factor D = ^t1/t2
00..0055
0
SSIINNGGLLEE PPUULLSSEE
Peak T_J = P_DM x Z_θJC + TC
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL
Junction
temp (°C)
0.0673
0.0182
Power
(watts)
0.188
0.361
0.0743
5.17
Case temperature (°C)
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL